Publications

2020

Adduct-based p-doping of Organic Semiconductors, Nobuya Sakai, Ross Warren, Fengyu Zhang, Simantini Nayak, Sameer V. Kesava, Yen-Hung Lin,　Himansu S. Biswal, Xin Lin, Antoine Kahn, Moritz Riede, Pabitra K. Nayak and Henry J. Snaith, Nature Materials (submitted 8/7/20)
Gap States in Methylammonium Lead Halides: The Link to Dimethylsulfoxide?, Fengyu Zhang, J. Clay Hamill Jr., Yueh-Lin Loo, Antoine Kahn, Adv. Mat. 2003482 (2020)
n-Doping of Low Electron Affinity Polymer Used as an Electron Transport Layer in Organic Light-Emitting Diodes, Hannah L. Smith, Jordan T. Dull, Stephen Barlow, Barry P. Rand, Seth R. Marder, and Antoine Kahn, Adv. Funct. Mat. 30, 2000328 (2020)
Structural and Electronic Impact of an Asymmetric Organic Ligand in Dion-Jacobson Phase Lead Iodide Perovskites, Scott Silver, Sangni Xun, Hong Li, Jean-Luc Brédas, Antoine Kahn, Adv. Energy Mater. 1903900 (2020) DOI: 10.1002/aenm.201903900
Ultraviolet Photoemission Spectroscopy and Kelvin Probe Measurements on Metal Halide Perovskites: Advantages and Pitfalls, Fengyu Zhang, Scott H. Silver, Nakita K. Noel, Florian Ullrich, Barry P. Rand and Antoine Kahn, Adv. Energy Mater. 1903252 (2020) DOI: 10.1002/aenm.201903252
Photocurrent deviation from linearity due to limited hole transport layer conductivity in organic photodetectors, J. Euvrard, A. Revaux, A. Kahn, and D. Vuillaume, Org. Electr. 76, 105450 (2020) DOI: 10.1016/j.orgel.2019.105450

2019

Elucidating the Role of a Tetrafluoroborate-based Ionic Liquid at the n-Type Oxide/Perovskite Interface, Nakita K. Noel, Severin N. Habisreutinger, Bernard Wenger, Yen-Hung Lin, Fengyu Zhang, Jay B. Patel, Antoine Kahn, Michael B. Johnston, Henry J. Snaith, Adv. Energy Mat. 1903231 (2019) DOI: 10.1002/aenm.201903231
High-Voltage Photogeneration Exclusively via Aggregation-Induced Triplet States in a Heavy- Atom-Free Non-Planar Organic Semiconductor, Nicholas C. Davy, Marius Koch, Guy Olivier Ngongang Ndjawa, Xin Lin, Gabriel Man, Yunhui L. Lin, Jeni Sorli, Barry P. Rand, Antoine Kahn, Gregory Scholes and Yueh-Lin Loo, Adv. Energ. Mat. 9, 1901649 (2019) DOI: 10.1002/aenm.201901649
Interfacial Charge-transfer Doping of Metal Halide Perovskites for High Performance Photovoltaics, Nakita K. Noel, Severin N. Habisreutinger, Alba Pellaroque, Federico Pulvirenti, Bernard Wenger, Fengyu Zhang, Yen-Hung Lin, Obadiah G. Reid, Johannes Leisen, Yadong Zhang, Stephen Barlow, Antoine Kahn, Seth R. Marder, Henry J. Snaith, Craig B. Arnold and Barry P. Rand, Energ. & Envir. Sci. 12, 3063 (2019) DOI: 10.1039/C9EE01773A
Combined experimental and theoretical investigation of the quantum well energetics in n=2 Ruddlesden Popper phase perovskites, Scott Silver, Qingqing Dai, Hong Li, Jean-Luc Brédas, Antoine Kahn, Adv. Energy Mat. 9, 1901005 (2019) DOI: 10.1002/aenm.201901005
Molecular reductant-induced control of a graphene-organic interface for electron injection, Fengyu Zhang, Chen Klein, Elena Longhi, Stephen Barlow, Seth R. Marder, Gabby Sarusi and Antoine Kahn, Chem. Mat. 31, 6624 (2019) DOI: 10.1021/acs.chemmater.9b00566
Complexities of Contact Potential Difference Measurements on Metal Halide Perovskite Surfaces, Fengyu Zhang, Florian Ullrich, Scott Silver, Ross Kerner, Barry Rand and Antoine Kahn, J. Chem. Phys. Lett. 10, 890 (2019) DOI: 10.1021/acs.jpclett.8b03878
Halide perovskites: Is it all about the interfaces? Philip Schulz,David Cahen,Antoine Kahn, Chemical Review, 119, 3349-3417 (2019) DOI: 10.1021/acs.chemrev.8b00558
Electrical Doping of Organic Semiconductors with Molecular Oxidants and Reductants, Stephen Barlow, Seth R. Marder, Xin Lin, Fengyu Zhang and Antoine Kahn, Handbook of Conducting Polymers, Conjugated Polymers: Properties, Processing and Applications, CRC Press (published 3/25/2019)
Sensitization of silicon by singlet exciton fission in tetracene, Markus Einzinger, Tony Wu, Hannah L. Smith, Collin F. Perkinson, Lea Nienhaus, Sarah Wieghold, Daniel N. Congreve, Antoine Kahn, Moungi G. Bawendi, Marc A. Baldo, Nature 571, 90 (2019) DOI: 10.1038/s41586-019-1339-4
What limits the open-circuit voltage of Br-based perovskite solar devices? Arava Zohar, Michael Kulbak, Igal Levine, Antoine Kahn, Gary Hodes, David Cahen, ACS Energy Lett. 4, 1 (2019) DOI: 10.1021/acsenergylett.8b01920

2018

Ultrasensitive Heterojunctions of Graphene and 2D Perovskites Reveal Spontaneous Iodide Loss, Lianfeng Zhao, He Tian, Scott H. Silver, Antoine Kahn, Tian-Ling Ren, Barry P. Rand, Joule, 2, 2133 (2018) DOI: 10.1016/j.joule.2018.07.011
Variable Charge Transfer State Energies at Nanostructured Pentacene/C₆₀ Interfaces, YunHui L. Lin, Fengyu Zhang, Ross A. Kerner, Terry Chien-Jen Yang, Antoine Kahn, and Barry P. Rand, Appl. Phys. Lett., 112, 213302 (2018) DOI: 10.1063/1.5030885
Toward a better understanding of the doping mechanism involved in Mo(tfd-COCF₃)₃ doped PBDTTT-c, J. Euvrard, A. Revaux, J. Bleuse, S. S. Nobre, A. Kahn and D. Vuillaume, J. Appl. Phys. 123, 225501 (2018) DOI: 10.1063/1.5029810
Characterization of the Valence and Conduction Band Levels of n=1 Two-Dimensional Perovskites: A Combined Experimental and Theoretical Investigation, Scott Silver, Jun Yin, Hong Li, Jean-Luc Brédas, Antoine Kahn, Adv. Energ. Mat. 1703468 (2018) DOI: 10.1002/aenm.201703468
Investigation of the high electron affinity molecular dopant F₆-TCNNQ for hole-transport materials, Fengyu Zhang and Antoine Kahn, Adv. Funct. Mat. 28, 1703780 (2018) DOI: 10.1002/adfm.201703780
Impact of Unintentional Oxygen Doping on Organic Photodetectors, Julie Euvrard, Amélie Revaux, Alexandra Cantarano, Stéphanie Jacob, Antoine Kahn and Dominique Vuillaume, Org. Electr. 54, 64 (2018) DOI : 10.1016/j.orgel.2017.12.008

2017

The formation of polymer-dopant aggregates as a possible origin of limited doping efficiency at high dopant concentration,Julie Euvrard, Amélie Revaux, Pierre-Alain Bayle, Michel Bardet, Dominique Vuillaume, and Antoine Kahn, Org. Electr. 53, 135 (2017) DOI : 10.1016/j.orgel.2017.11.020
Mixed-halide perovskites with stabilized band gaps, Zhengguo Xiao, Lianfeng Zhao, Nhu L. Tran, Yunhui (Lisa) Lin, Scott H. Silver, Ross A. Kerner, Nan Yao, Antoine Kahn, Gregory D. Scholes, Barry P. Rand, Nano Letters 17, 6863 (2017) DOI: 10.1021/acs.nanolett.7b03179
Beating the Thermodynamic Limit: Photo-Activation of n-Doping in Organic Semiconductors, Xin Lin, Berthold Wegner, Kyung M. Lee, Michael A. Fusella, Fengyu Zhang, Karttikay Moudgil, Barry P. Rand, Stephen Barlow, Seth R. Marder, Norbert Kochand Antoine Kahn, Nature Materials 16, 1209 (2017) DOI: 10.1038/nmat5027
Pairing of near-ultraviolet solar cells with electrochromic windows for smart management of the solar spectrum, Nicholas C. Davy, Melda Sezen-Edmonds, Jia Gao, Xin Lin, Amy Liu, Nan Yao, Antoine Kahn and Yueh-Lin Loo, Nature Energy, 2, 17104 (2017) DOI 10.1038/nenergy.2017.104
Electronic structure of the CsPbBr3/polytriarylamine (PTAA) system, James Endres, Michael Kulbak, Lianfeng Zhao, Barry P. Rand, David Cahen, Gary Hodes, and Antoine Kahn, J. Appl. Phys. 121, 035304 (2017) DOI: 10.1063/1.4974471

2016

High Work Function Molybdenum Oxide Hole Extraction Contacts in Hybrid Organic-Inorganic Perovskite Solar Cells, Philip Schulz, Jan O. Tiepelt, Jeffrey A. Christians, Igal Levine, Eran Edri, Erin Sanehira, Gary Hodes, David, Cahen, Antoine Kahn, ACS Appl. Mater. Inter. 8, 31491 (2016) DOI: 10.1021/acsami.6b10898
P-doped organic semiconductor: potential replacement for PEDOT:PSS in organic photodetectors, Julie Herrbach, Amélie Revaux, Dominique Vuillaume and Antoine Kahn, Appl. Phys. Lett. 109, 073301 (2016) DOI: 10.1063/1.4961444
Valence and conduction band densities of states of metal halide perovskites: a combined experimental - theoretical study, James Endres, David A. Egger, Michael Kulbak, Ross A. Kerner, Lianfeng Zhao, Scott H. Silver, Gary Hodes, Barry P. Rand, David Cahen, Leeor Kronik, and Antoine Kahn, J. Phys. Chem. Lett. 7, 2722 (2016) DOI: 10.1021/acs.jpclett.6b00946
Morphological tuning of the energetics in singlet fission organic solar cells, YunHui L. Lin, Michael A. Fusella, Oleg V. Kozlov, Xin Lin, Antoine Kahn, Maxim S. Pshenichnikov and Barry P. Rand, Adv. Func. Mat. 26, 6489-6494 (2016)
Electronically passivated hole-blocking titanium dioxide/silicon heterojunction for hybrid silicon photovoltaics, Gabriel Man, Jeffrey Schwartz, James C. Sturm and Antoine Kahn, Adv. Mat. Int. 3, 1600026 (2016) DOI: 10.1002/admi.201600026
Impact of a Low Concentration of Dopants on the Distribution of Gap States in a Molecular Semiconductor, Xin Lin, Geoffrey E. Purdum, Swagat K. Mohapatra, Stephen Barlow, Seth R. Marder, Yueh-Lin Loo and Antoine Kahn, Chem. Mat. 28, 2677 (2016) DOI: 10.1021/acs.chemmater.6b00165
Solution-processed p-dopant as interlayer in polymer solar cells, F. Guillain, J. Endres, L. Bourgeois, A. Kahn, L. Vignau and G. Wantz, ACS Appl. Mat. Interf. 8, 9262 (2016) DOI: 10.1021/acsami.6b00356
Revisiting the Valence and Conduction Band Size Dependence of PbS Quantum Dot Thin Films, Elisa M. Miller, Daniel M. Kroupa, Jianbing Zhang, Philip Schulz, Ashley R Marshall, Antoine Kahn, Stephan Lany, Joseph M. Luther, Matthew C. Beard, Craig L Perkins, and Jao van de Lagemaat, ACS Nano,10, 3302 (2016) DOI: 10.1021/acsnano.5b06833
Determination of energy level alignment within an energy cascade organic solar cell, James Endres, I. Pelczer, Barry P. Rand, Antoine Kahn, Chem. Mat. 28, 794 (2016)
Contorted Hexabenzocoronenes with Extended Heterocyclic Moieties Improve Visible Light Absorption and Performance in Organic Solar Cells, Nicholas C Davy, Gabriel Man, Ross Kerner, Michael Fusella, Geoff Purdum, Melda Sezen, Barry Rand, Antoine Kahn and Yueh-Lin Loo, Chem. Mat. 28, 673 (2016) DOI: 10.1021/acs.chemmater.5b04503
Fermi level, work function and vacuum level, A. Kahn, Materials Horizons, 3, 7-10 (2016) DOI: 10.1039/c5mh00160a
Experimental Characterization of Interfaces of Relevance to Organic Electronics, Gabriel Man, James Endres, Xin Lin and Antoine Kahn, in WSPC Reference on Organic Electronics, Jean-Luc Brédas and Seth R. Marder, edts., World Scientific, chapt. 6, p. 159-191 (2016)

2015

Low Temperature Synthesis of a TiO₂/Si Heterojunction, G. Sahasrabudhe, S. M. Rupich, J. Jhaveri, A. H. Berg, K. A. Nagamatsu, G. Man, Y. J. Chabal, A. Kahn, S. Wagner, J. C. Sturm and J. Schwartz, J. Am. Chem. Soc. 137, 14842 (2015) DOI: 10.1021/jacs.5b09750
Hybrid Organic-Inorganic Perovskites (HOIPs): Opportunities and Challenges, Joseph Berry, Tonio Buonassisi, David A. Egger, Gary Hodes, Leeor Kronik, Yueh-Lin Loo, Igor Lubomirsky, Seth R. Marder, Yitzhak Mastai, Joel S. Miller, David B. Mitzi, Yaron Paz, Andrew Rappe, Ilan Riess, Boris Rybtchinski, Oscar Stafsudd, Vladan Stevanovic, Michael Toney, David Zitoun, Antoine Kahn, David Ginley, David Cahen, Adv. Mat. 27, 5102 (2015) DOI: 10.1002/adma.201502294
Electronic Level Alignment in Inverted Organometal Perovskite Solar Cells, Philip Schulz, Luisa L. Whittaker-Brooks, Bradley A. MacLeod, Dana C. Olson, Yueh-Lin Loo and Antoine Kahn, Adv. Mat. Int. 2, 1400532 (2015) DOI: 10.1002/admi.201400532
Dopant Controlled Trap-Filling and Conductivity Enhancement in an Electron-Transport Polymer, Andrew Higgins, Swagat K. Mohapatra, Stephen Barlow, Seth R. Marder and Antoine Kahn, Appl. Phys. Lett. 106, 163301 (2015)
Investigation of p-dopant diffusion in polymer films and bulk heterojunctions: stable spatially-confined doping for all-solution processed solar cells, An Dai, Alan Wan, Charles Magee, Yadong Zhang, Steve Barlow, Seth R. Marder and Antoine Kahn, Org. Electr. 23, 151 (2015) DOI: 10.1016/j.orgel.2015.04.023
Halogenation of a Non-planar Molecular Semiconductor to Tune Energy Levels and Bandgaps for Electron Transport, Anna M. Hiszpanski, Jonathan D. Saathoff, Leo Shaw, He Wang, Laura Kraya, Fransizka Lüttich, Michael A. Brady, Michael L. Chabinyc, Antoine Kahn, Paulette Clancy, and Yueh-Lin Loo, Chem. Mat. 27, 1892 (2015)
Quantifying the Extent of Contact Doping at the Interface Between High Work Function Contacts and Poly(3-hexylthiophene) (P3HT), R. Clayton Shallcross, Tobias Stubhan, Erin L. Ratcliff,Antoine Kahn,Christoph J. Brabec and Neal R. Armstrong, J. Phys. Chem. Lett. 6, 1303 (2015) DOI: 10.1021/acs.jpclett.5b00444
Titanium Dioxide/Silicon Hole-Blocking Selective Contact to Enable Double-Heterojunction Crystalline Silicon-Based Solar Cell, Ken A. Nagamatsu, Sushobhan Avasthi, Girija Sahasrabudhe, Gabriel Man, Janam Jhaveri, Alexander H. Berg, Jeffrey Schwartz, Antoine Kahn, Sigurd Wagner, and James C. Sturm, Appl. Phys. Lett. 106, 123906 (2015) DOI: 10.1063/1.4916540
Stability of inverted organic solar cells with sol-gel-deposited ZnO electron contact layers, Bradley A. MacLeod, Bertrand Tremolet de Villers, Philip Schulz, Paul F. Ndione, Hyungchul Kim, Anthony J. Giordano, Kai Zhu, Seth R. Marder, Samuel Graham, Joseph J. Berry, Antoine Kahn, Dana C. Olson, Energ. & Envir. Sci. 8, 592 (2015)
Double-Heterojunction Crystalline Silicon Solar Cell with Electron Selective TiO₂ Cathode Contact Fabricated at 100 degrees C with Open-Circuit Voltage of 640 mV, Janam Jhaveri, Ken A. Nagamatsu, Alexander H. Berg, Gabriel Man, Girija Sahasrabudhe, Sigurd Wagner, Jeffrey Schwartz, Antoine Kahn, James C. Sturm, Abstract to IEEE 42nd Photovoltaic Specialist Conference (PVSC) (2015)
Impact of blend morphology on interface state recombination in bulk heterojunction organic solar cells, Benjamin Bouthinon, Raphaël Clerc, Jerôme Vaillant, Jean Marie Verilhac, Jérôme Faure-Vincent, David Djurado, Irina Ionica, Gabriel Man, Antoine Gras, Georges Pananakakis, Romain Gwoziecki, Antoine Kahn, Adv. Func. Mat., 25, 1090 (2015) DOI: 10.1002/adfm.201401633

2014

Tailoring Electron-Transfer Barriers for Zinc Oxide / C₆₀ Interfaces, Philip Schulz, Leah L. Kelly, Paul Winget, Hong Li, Hyungchul Kim, Paul Ndione, Joseph J. Berry, Samuel Graham, Jean-Luc Brédas, Antoine Kahn, Oliver L. A. Monti, Adv. Funct. Mat. 24, 7381 (2014) DOI: 10.1002/adfm.201401794
Molecular Doping and tuning threshold voltage in 6,13-bis(triisopropylsilylethynyl)pentacene / polymer blend transistors, James Belasco, Swagat K. Mohapatra, Yadong Zhang, Stephen Barlow, Seth R. Marder and Antoine Kahn, Appl. Phys. Lett. 105, 063301 (2014) DOI: 10.1063/1.4892809
Impact of Functionalized Polystyrenes as the Electron Injection Layer on Au and Al surfaces: A Combined Theoretical and Experimental Study,Theodoros A. Papadopoulos, Hong Li, Eung-Gun Kim, Jie Liu, James A. Cella, Christian M. Heller, Andrew Shu, Antoine Kahn, Anil Duggal, and Jean-Luc Brédas, Israel Journal of Chemistry (Michael Bendikov memorial volume) 54, 779 (2014)
Interface dipole engineering at organic-organic semiconductor heterojunctions, Andrew L. Shu,William E. McClain, Jeffrey Schwartz, and Antoine Kahn, Org. Electr. 15, 2360 (2014) DOI: 10.1016/j.orgel.2014.06.039
Air exposure induced gas molecule incorporation into spiro-MeOTAD films: Effects on electronic properties, Luis K. Ono, Philip Schulz, James J. Endres, Yuichi Kato, Gueorgui Nikiforov, Michael-Chandro Roy, Antoine Kahn, Yabing Qi, J. Phys. Chem. Lett. 5, 1374 (2014) DOI: 10.1021/jz500414m
Chemically controlled reversible and irreversible extraction barriers via stable interface modification of zinc oxide electron collection layer in polycarbazole-based organic solar cells, Sarah R. Cowan,Philip Schulz, Anthony J. Giordano, Andres Garcia, Bradley A. MacLeod, Seth Marder, Antoine Kahn, David Ginley, Erin L. Ratcliff, Dana C. Olson, Adv. Funct. Mat. 24, 4671 (2014) DOI: 10.1002/adfm.201400158
Improved performance in bulk heterojunction organic solar cells with sol-gel MgZnO electron-collecting layer, Bradley A. MacLeod, Philip Schulz, Sarah R. Cowan, Andres Garcia, David S. Ginley, Antoine Kahn, Dana C. Olson, Adv. Energ. Mat. 4, 1400073 (2014) DOI: 10.1002/aenm.201400073
Double-Heterojunction Crystalline Silicon Solar Cell Fabricated at 250^oC with 12.9% Efficiency, S. Avasthi, K.A. Nagamatsu, J. Jhaveri, W.E. McClain, G. Man, A. Kahn, J. Schwartz, S. Wagner, J.C. Sturm, Technical Digest of IEEE Photovoltaic Specialists Conference 40, 949 (2014).
Impact of hole transport layer surface properties on morphology of polymer-fullerene bulk heterojunction, N. Edwin Widjonarko, Philip Schulz, Philip A. Parilla, Craig L. Perkins, Paul F. Ndione, Ajaya K. Sigdel, Dana C. Olson, David S. Ginley, Antoine Kahn, Michael F. Toney, Joseph J. Berry, Adv. Energ. Mat. 4, 1301879 (2014) DOI: 10.1002/aenm.201301879
Enhancing the Tunability of the Open-Circuit Voltage of Hybrid Photovoltaics with Mixed Molecular Monolayers, Lee Barnea-Nehoshtan, Pabitra K. Nayak, Andrew Shu, Tatyana Bendikov, Antoine Kahn and David Cahen, ACS Applied Materials & Interfaces 6, 2317 (2014)
Enhanced charge-carrier injection and collection via lamination of doped polymer layers p-doped with a solution-processible molybdenum complex, An Dai, Andrew Shu, He Wang,Steve Barlow, Swagat Mohapatra,Tissa Sajoto,Yinhua Zhou,Canek Fuentes-Hernandez,Yueh-Lin Loo,Seth R. Marder,Bernard Kippelen, and Antoine Kahn, Adv. Funct. Mat. 24, 2197 (2014) DOI: 10.1002/adfm.201303232
Interface energetics in organo-metal halide perovskite-based photovoltaic cells, Philip Schulz, Eran Edri, Saar Kirmayer, Gary Hodes, David Cahen and Antoine Kahn, Energ. & Envir. Sci. 7, 1377 (2014) DOI:10.1039/C4EE00168K
NiO_x/MoO₃ Bi-Layers as Efficient Hole Extraction Contacts in Organic Solar Cells, Philip Schulz, Sarah R. Cowan, Ze-Lei Guan, Andres Garcia, Dana C. Olson, and Antoine Kahn, Adv. Funct. Mat. 24, 701 (2014) DOI: 10.1002/adfm.201302477

2013

Effect of Doping Density on the Charge Rearrangement and Interface Dipole at the Molecule−Silicon Interface, Omer Yaffe, Sidharam Pujari, Ofer Sinai, Ayelet Vilan, Han Zuilhof, Antoine Kahn, Leeor Kronik, Hagai Cohen, and David Cahen, J. Phys. Chem. C 17, 22422 (2013) DOI: 10.1021/jp403177e
Nature of the interfaces between stoichiometric and under-stoichiometric MoO₃ and 4,4′-N,N′-dicarbazole-biphenyl: A combined theoretical and experimental study, Theodoros A. Papadopoulos, Jens Meyer, Hong Li, Zelei Guan, Antoine Kahn, and Jean-Luc Brédas, Adv. Funct. Mat. 23, 6091 (2013) DOI: 10.1002/adfm.201301466
The effect of structural order on solar cell parameters as illustrated in a SiC-organic junction model, Pabitra K. Nayak, Lee Barnea, Soyoung Kim, Andrew Shu, Antoine Kahn, David Lederman and David Cahen, Energy & Environ. Sci. 6, 3272 (2013) DOI: 10.1039/C3EE42828A
Hole-blocking Crystalline-silicon/Titanium-oxide Heterojunction with Very Low Interface Recombination Velocity, J. Jhaveri, S. Avasthi, G. Man, W.E. McClain, K. Nagamatsu, A. Kahn, J. Schwartz, J.C. Sturm, Technical Digest of IEEE Photovoltaic Specialists Conference 39, 3292 (2013)
Tuning Contact Recombination and Open-Circuit Voltage in Polymer Solar Cells via Self-Assembled Monolayer Adsorption at the Organic-Metal Oxide Interface, He Wang, Enrique D. Gomez, Zelei Guan, Cherno Jaye, Michael F. Toney, Daniel A. Fischer, Antoine Kahn and Yueh-Lin Loo, J. Phys. Chem. C 117, 20474 (2013)
Energy level alignment and morphology of Ag and Au nanoparticle recombination contacts in tandem planar heterojunction solar cells, K. Xerxes Steirer, Gordon A. MacDonald, Selina Olthof, Jeremy Gantz, Erin Ratcliff, Antoine Kahn, Neal R. Armstrong, J. Phys. Chem. C 117, 22331-22340 (2013) DOI: 10.1021/jp402672j
Wide Bandgap Heterojunctions on Crystalline Silicon, James Sturm, Sushobhan Avasthi, Ken Nagamatsu, Janam Jhaveri, William E McClain, Gabriel Man, Antoine Kahn, Jeffrey Schwartz, Sigurd Wagner, ECS Transactions, 58, 97 (2013)
A Mechanistic Study on the Solution Phase N-Doping of 1,3-Dimethyl-2-Aryl-2,3-Dihydro-1H-Benzoimidazole Derivatives, Benjamin D. Naab, Song Guo, Selina Olthof, Eric Evans, Peng Wei, Glenn Millhauser, Antoine Kahn,Stephen Barlow, Seth Marder, and Zhenan Bao, J. Amer. Chem. Soc. 135, 15018 (2013)
Correlation of open-circuit voltage and energy levels in zinc-phthalocyanine:C₆₀ bulk heterojunction solar cells with varied mixing ratio, Max L. Tietze, Wolfgang Tress, Steffen Pfützner, Christoph, Schünemann, Lorenzo Burtone, Moritz Riede, Karl Leo, Koen Vandewal, Selina Olthof, Philip Schulz, and Antoine Kahn, Phys. Rev. B 88, 085119 (2013)
Gap states in Pentacene thin film induced by inert gas exposure, Fabio Bussolotti, Satoshi Kera, Kazuhiro Kudo, Antoine Kahn and Nobuo Ueno, Phys. Rev. Lett. 110, 267602 (2013)
Deciphering the Metal-C₆₀ Interface in Optoelectronic Devices: Evidence for the Reduction of C₆₀ by Al Deposition, Dallas L. Matz, Erin L. Ratcliff, Jens Meyer, Antoine Kahn, and Jeanne E. Pemberton, ACS Applied Materials & Interfaces 5, 6001 (2013)
Hole-Blocking Titanium-Oxide/Silicon Heterojunction for Photovoltaics, Sushobhan Avasthi, Will McClain, Gabriel Man, Antoine Kahn, Jeffrey Schwartz, and James C. Sturm, Appl. Phys. Lett. 102, 203901 (2013)
Energy Levels at Molecule-Metal Interfaces, Antoine Kahn and Norbert Koch, in The Molecule-Metal Interface, N. Koch, N. Ueno and A. Wee edits., Wiley-VCH Verlag GmbH & Co., ISBN: 978-3-527-41060-6, p. 219-238 (2013)
Photoinduced Hole Transfer Becomes Suppressed with Diminished Driving Force in Polymer-Fullerene Solar Cells While Electron Transfer Remains Active, Guoqiang Ren, Cody W. Schlenker, Eilaf Ahmed, Selvam Subramaniyan, Selina Olthof, Antoine Kahn, David S. Ginger, and Samson A. Jenekhe, Adv. Funct. Mat. 23, 1238 (2013)
Electronic structure and carrier transport at laminated polymer homojunctions, Andrew Shu, An Dai, He Wang, Yueh-Lin Loo, and Antoine Kahn, Org. Electr. 14, 149 (2013)
Surface Dipole Engineering for Conducting Polymers, Will McClain, Peter Florence, Andrew Shu, Antoine Kahn and Jeffrey Schwartz, Org. Electr. 14, 411 (2013)
Energy Levels at Molecule-Metal Interfaces, Antoine Kahn and Norbert Koch, in The Molecule-Metal Interface, N. Koch, N. Ueno and A. Wee edits., Wiley-VCH Verlag GmbH & Co. ISBN: 978-3-527-41060-6, p. 219-238 (2013)

2012

Passivation of trap states in unpurified and purified C₆₀ and its influence on organic field effect transistor performance, Selina Olthof, Sanjeev Singh, Swagat K. Mohapatra, Stephen Barlow, Seth R. Marder, Bernard Kippelen and Antoine Kahn, Appl. Phys. Lett. 101, 253303 (2012)
Correlation between interface energetics and open circuit voltage in organic photovoltaic cells, A. Wilke, J. Endres, U. Hörmann, J. Niederhausen,R. Schlesinger, J. Frisch, P. Amsalem, J.Wagner, M. Gruber, A. Opitz, A. Vollmer, W. Brütting, A. Kahn and N. Koch, Appl. Phys. Lett. 101, 233301 (2012)
Ultra-low doping in organic semiconductors: evidence of trap filling, Selina Olthof, Swagat K. Mohapatra, Stephen Barlow, Shafigh Mehraeen, Veaceslav Coropceanu, Jean-Luc Brédas, Seth R. Marder, and Antoine Kahn, Phys. Rev. Lett. 109, 176601 (2012)
Studies of the optimization of recombination layers for inverted tandem polymer solar cells, Jae Won Shim,Yinhua Zhou,Canek Fuentes-Hernandez,Amir Dindar, Zelei Guan,Hyeunseok Cheun, Antoine Kahn, and Bernard Kippelen, Solar Energy Materials & Solar Cells, 107, 51 (2012)
Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications, Jens Meyer, Sami Hamwi, Michael Kröger, Wolfgang Kowalsky, Thomas Riedl and Antoine Kahn, Adv. Mat. 24, 5408 (2012)
Polyvinylpyrrolidone-modified indium tin oxide as an electron-selective electrode for inverted polymer solar cells, J. Shim, H. Cheun, J. Meyer, C. Fuentes-Hernandez, A. Dindar,Y. H. Zhou, D. K. Hwang, A. Kahn, and B. Kippelen, Appl. Phys. Lett. 101, 073303 (2012)
A Universal Method to Produce Low–Work Function Electrodes for Organic Electronics, Y. Zhou, C. Fuentes-Hernandez, J. Shim, J. Meyer, A. J. Giordano,H. Li, P. Winget, T. Papadopoulos, H. Cheun, J. Kim, M. Fenoll, Amir Dindar, W. Haske, E. Najafabadi, T.M. Khan, H. Sojoudi, S. Barlow, S. Graham, J.-L. Brédas,S. R. Marder, A. Kahn, and B. Kippelen, Science 336, 327 (2012)
Oriented Growth of Al₂O₃:ZnO nanolaminates for use as Electron-Selective Electrodes in Inverted Polymer Solar Cells, Hyeunseok Cheun, Canek Fuentes-Hernandez, Yinhua Zhou, Yunnan Fang, Ye Cai, Hong Li, Ajaya Sigdel, Jens Meyer, Amir Dindar, Jaewon Shim, Joseph Berry, Jean-Luc Brédas, Antoine Kahn, Kenneth H. Sandhage, and Bernard Kippelen, Adv. Funct. Mat., 22, 1531 (2012)
Energy level alignment in PCDTBT:PC₇₀BM solar cells: solution processed NiO_x for improved hole collection and efficiency, Erin L. Ratcliff, Jens Meyer, K. Xerxes Steirer, Neal R. Armstrong, Dana Olson, and Antoine Kahn, Org. Electr. 13, 744 (2012)
Photovoltaic Efficiency Limits and Material Disorder, Pabitra K. Nayak, Germa Garcia-Belmonte, Antoine Kahn, Juan Bisquert and David Cahen, Energy & Environmental Science, 5, 6022 (2012)
Solution doping of organic semiconductors using air-stable n-dopants , Yabing Qi, Song Guo, Tissa Sajoto, Sang Bok Kim, Swagat Mohapatra, Stephen Barlow, Seth R. Marder, and Antoine Kahn, Appl. Phys. Lett.100, 083305 (2012)
Low-temperature, solution-processed molybdenum oxide hole-transport layer for organic photovoltaics, Scott R. Hammond, Jens Meyer, Nicodemus Widjonarko, Paul Ndione, Ajay Sigdel, Joseph Berry, Alexander Miedaner, Antoine Kahn, David Ginley, Dana C. Olson, J. Mat. Chem. 22, 3249 (2012)
n-Doping of Organic Electronic Materials Using Air-Stable Organometallics, Guo Song, Sang Bok Kim,Swagat Mohapatra, Yabing Qi, Tissa Sajoto, Antoine Kahn, Seth R. Marder, Stephen Barlow, Adv. Mat. 24, 699 (2012)
Charge transport across metal/molecular (alkyl) monolayer-Si junctions is dominated by the LUMO level, Omer Yaffe, Yabing Qi, Lior Segev, Luc Scheres, Sreenivasa Reddy Puniredd, Tal Ely, Izhar Ron, Hossam Haick, Han Zuilhof, Leeor Kronik, Antoine Kahn, Ayelet Vilan, David Cahen, Phys. Rev. B 85, 045433 (2012)
Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications, Jens Meyer, Sami Hamwi, Michael Kröger, Wolfgang Kowalsky, Thomas Riedl and Antoine Kahn, Adv. Mat. 24, 5408 (2012)

2011

Inverted organic solar cells with sol-gel processed high work-function vanadium oxide hole-extraction layers, Kirill Zilberberg, Sara Trost, Jens Meyer, Antoine Kahn, Andreas Behrendt, Dirk Lützenkirchen-Hecht, Ronald Frahm and Thomas Riedl, Adv. Funct. Mat. 21, 4776 (2011)
Evidence for near-surface NiOOH species in solution-processed NiO_x selective interlayer materials: impact on energetics and the performance of polymer bulk heterojunction photovoltaics, Erin L. Ratcliff, Jens Meyer, K. Xerxes Steirer, Andres Garcia, Joseph J. Berry,David S. Ginley, Dana C. Olson, Antoine Kahn, Neal R. Armstrong, Chem. Mat. 23, 4988 (2011)
Modular Construction of P3HT/PCBM Planar-Heterojunction Solar Cells by Lamination allows Elucidation of Processing Structure-Function Relationships, Jong Bok Kim, Zelei Guan, Stephanie Lee, Eleni Pavlopoulou, Michael F. Toney, Antoine Kahn and Yueh-Lin Loo, Org. Electr. 12, 1163 (2011)
Annealing Sequence Dependent Open-Circuit Voltage of Inverted Polymer Solar Cells Attributable to Interfacial Chemical Reaction between Top Electrodes and Photoactive Layers, Jong Bok Kim, Ze-Lei Guan, Andrew L. Shu, Antoine Kahn, and Yueh-Lin Loo, Langmuir, 27, 11265 (2011)
Hexaazatriphenylene (HAT) versus tri-HAT: The Bigger the Better?, Rafael Juárez, María Moreno Oliva, Mar Ramos, José Luis Segura, Carlos Alemán, Francisco Rodríguez-Ropero, David Curcó, Francisco Montilla, Veaceslav Coropceanu, Jean Luc Brédas, Yabing Qi, Antoine Kahn, M. Carmen Ruiz Delgado, Juan Casado, Juan T. López Navarrete, Chemistry - A European Journal, 17, 10312 (2011)
Enhanced efficiency in plastic solar cells via energy matched solution-processed NiO_x interlayers, K. Xerxes Steirer, Paul Ndione, N. Edwin Widjonarko, Matthew T. Lloyd, Jens Meyer, Erin Ratcliff, Antoine Kahn, Neal R. Armstrong, Calvin J. Curtis, David S. Ginley, Joseph J. Berry, and Dana C. Olson, Adv. Energy Mat. 1, 813 (2011)
Electronic structure of the poly(3-hexylthiophene):indene-C₆₀ bisadduct bulk heterojunction, Ze-Lei Guan, Jong Bok Kim, Yueh-Lin Loo, and Antoine Kahn, J. Appl. Phys. 110, 043719 (2011)
Filled and empty states of alkanethiol monolayer on Au (111): Fermi level asymmetry and implications for electron transport, Yabing Qi, Omer Yaffe, Einat Tirosh,Ayelet Vilan, David Cahen, and Antoine Kahn, Chem. Phys. Lett. 511, 344 (2011)
Electronic structure of Vanadium pentoxide: An efficient hole injector for organic electronic materials, J. Meyer, K. Zilberberg, T. Riedl, and A. Kahn, J. Appl. Phys. 110, 033710 (2011)
Soluble fullerene derivatives: The effect of electronic structure on transistor performance and air stability , James M. Ball, Ricardo K. M. Bouwer, Floris B. Kooistra, Jarvist M. Frost, Yabing Qi, Ester Buchaca Domingo, Jeremy Smith, Dago M. de Leeuw, Jan C. Hummelen, Jenny Nelson, Antoine Kahn, Natalie Stingelin, Donal D. C. Bradley and Thomas D. Anthopoulos, J. Appl. Phys. 110, 014506 (2011)
Electronic structure and band alignment of 9,10-phenanthrenequinone passivated silicon surfaces, Sushobhan Avashti, Yabing Qi, Grigory K. Vertelov, Jeffrey Schwartz, Antoine Kahn, and James C. Sturm, Surf. Sci. 605, 1308 (2011)
Device Characteristics of Bulk-Heterojunction Polymer Solar Cells are Independent of Interfacial Segregation of Active Layers, He Wang, Enrique D. Gomez, Jongbok Kim, Zelei Guan, Cherno Jaye, Daniel A. Fischer, Antoine Kahn,and Yueh-Lin Loo, Chem. Mat. 23, 2020 (2011)
Energy-level alignment in 4'-substituted 4-stilbene thiolate self-assembled monolayers on gold, Michał Malicki, Georg Heimel, Zelei Guan, Sieu D. Ha, Stephen Barlow, Antoine Kahn, and Seth R. Marder, J. Phys. Chem. C 115, 7487 (2011)
Electronic Structure of Molybdenum-Oxide Films and Associated Charge Injection Mechanisms in Organic Devices, Jens Meyer and Antoine Kahn, J. Photon. Energy 1, 011109-1 (2011)
MoO₃ Films Spin-coated from Nanoparticle Suspension for Efficient Hole-Injection in Organic Electronics, Jens Meyer, Rebecca Khalandovsky, Patrick Görrn and Antoine Kahn, Adv. Mat. 23, 70 (2011)

2010

Molecular-scale properties of MoO₃-doped pentacene, Sieu D. Ha, Jens Meyer and Antoine Kahn, Phys. Rev. B 82, 155434 (2010)
Remote doping of Pentacene OFET Channel: Control via Molecular Level Engineering, Wei Zhao, Yabing Qi, T. Sajoto, Stephen Barlow, Seth R. Marder, and Antoine Kahn, Appl. Phys. Lett. 97, 123305 (2010)
Direct determination of the electronic structure of the poly(3-hexylthiophene):phenyl-[6,6]-C₆₁ butyric acid methyl ester blend, Zelei Guan, Jongbok Kim, Yueh-Lin Loo, and Antoine Kahn, Org. Elect. 11, 1779 (2010)
Relative permittivity and Hubbard U of pentacene extracted from STM studies of p-doped films, Sieu D. Ha, Yabing Qi, and Antoine Kahn, Chem. Phys. Lett. 495, 212 (2010)
The influence of film morphology in high-mobility small molecule-polymer blend organic transistors, Jeremy Smith, Richard Hamilton, Yabing Qi, Antoine Kahn, Donal D. C. Bradley, Martin Heeney, Iain McCulloch, Thomas D. Anthopoulos, Adv. Funct. Mater. 20, 2330 (2010)
Hg/molecular monolayer-Si junctions: Electrical interplay between mono-layer properties and semiconductor doping density, Omer Yaffe, Luc Scheres, Lior Segev, Ariel Biller, Izhar Ron, Eric Salomon, Marcel Giesbers, Antoine Kahn, Leeor Kronik, Han Zuilhof, Ayelet Vilan and David Cahen, J. Phys. Chem. C 114, 10270 (2010)
The Origin of Low Water Vapor Transmission Rates through Al₂O₃/ZrO₂ Nanolaminate Gas-Diffusion Barriers Grown by Atomic Layer Deposition, J. Meyer, H. Schmidt, W. Kowalsky, T. Riedland A. Kahn, Appl. Phys. Lett. 96, 243308 (2010)
Electronic Structure and Dynamics at Organic Donor/Acceptor Interfaces, Xiaoyang Zhu and Antoine Kahn, MRS Bulletin 35, 443 (June 2010)
Silicon Surface Passivation by an Organic Overlayer of 9,10-Phenanthrenequinone, Sushobhan Avasthi, Yabing Qi, Grigory Vertelov, Jeffrey Schwartz, Antoine Kahn and James C. Sturm, Appl. Phys. Lett. 96, 222109 (2010)
Electronic States at GaN/Organic Semiconductor Interfaces: The Case of CuPc on Gallium Polar vs. Nitrogen Polar GaN, Hyunjin Kim, ZeLei Guan, Qian Sun, Antoine Kahn, Jung Han, Arto Nurmikko, J. Appl. Phys. 107, 113707 (2010)
The role of transition metal oxides in charge generation layers for stacked organic light emitting diodes, Sami Hamwi, Michael Kröger, Jens Meyer, Thomas Winkler, Marco Witte, Thomas Riedl, Antoine Kahn, and Wolfgang Kowalsky, Adv. Funct. Mat. 20, 1762 (2010)
Charge generation layers comprising transition metal-oxide/organic interfaces: Electronic structure and charge generation mechanism, J. Meyer, M. Kröger, S. Hamwi, T. Riedl, W. Kowalsky and A. Kahn, Appl. Phys. Lett. 96, 193302 (2010)
Effect of contamination on the electronic structure and hole-injection properties of MoO₃/ organic semiconductor interfaces, Jens Meyer, Andrew Shu. Michael Kröger and Antoine Kahn, Appl. Phys. Lett. 96, 133308 (2010)
Modification of gold source and drain electrodes by self-assembled monolayer in staggered n- and p-channel organic thin film transistors, Damien Boudinet, Mohamed Benwadih, Yabing Qi, Stéphane Altazin, Jean-Marie Vérilhac, Michael Kröger, Christophe Serbutoviez, Romain Gwoziecki, Romain Coppard, Gilles Le Blevennec, Antoine Kahn, and Gilles Horowitz, Org. Elect. 11, 227 (2010)
A molybdenum dithiolene complex as a p-dopant for organic semiconductors: a detailed study by UPS, IPES, XPS, RBS, and variable-temperature conductivity measurement, Y. Qi, T. Sajoto, M. Kröger, A. Kandabarow, W. Park, S. Barlow, E.-G. Kim, L. Wielunski, L. C. Feldman, R. A. Bartynski,J.-L. Brédas, S. R. Marder, and A. Kahn, Chem. Mat. 22, 524 (2010)
Phosphine oxide derivatives as hosts for blue phosphors: A joint theoretical and experimental study of their electronic structure, Dongwook Kim, Seyhan Salman, Veaceslav Coropceanu, Eric Salomon, Asanga B. Padmaperuma, Linda S. Sapochak, Antoine Kahn, and Jean-Luc Brédas, Chem. Mat. 22, 247 (2010)
Molecules on Si: Electronics with Chemistry, Ayelet Vilan, Omer Yaffe, Ariel Biller, Adi Salomon, Antoine Kahn, David Cahen, Adv. Mat. 22, 140 (2010)

2009

Isolated molecular dopants in pentacene observed by scanning tunneling microscopy, Sieu Ha and Antoine Kahn, Phys. Rev. B 80, 195410 (2009)
On the role of deep-lying electronic states in MoO₃ thin films for improved hole-injection into organic thin films, Michael Kröger, Sami Hamwi, Jens Meyer, Thomas Riedl, Wolfgang Kowalsky, and Antoine Kahn, Appl. Phys. Lett. 95, 123301 (2009)
A high electron affinity molybdenum compound for p-doping molecular semiconductors, Yabing Qi, Tissa Sajoto, Stephen Barlow, Eung-Gun Kim, Jean-Luc Brédas, Seth R. Marder and Antoine Kahn, J. Am. Chem. Soc. 131, 12530 (2009)
How Photoelectron Spectroscopy and Quantum Chemical Studies Can Help Understanding the Magnetic Properties of Molecules: An Example from the Class of Cu(II)-Bis(oxamato) Complexes, Björn Bräuer, Mandy Grobosch, Martin Knupfer, Florian Weigend, Yana Vaynzof, Antoine Kahn, and Georgeta Salvan, J. Phys. Chem. B Lett. 113, 10051 (2009)
Charge transfer at n-doped organic-organic heterojunctions, Wei Zhao and Antoine Kahn, J. Appl. Phys. 105, 123711 (2009)
Preparation and characterization of 4'-donor substituted stilbene-4-thiolate monolayers and their influence on the work function of gold, M. Malicki, Z. Guan, S.D. Ha, G. Heimel, S. Barlow, M. Rumi, A. Kahn, S.R. Marder, Langmuir 25, 7967 (2009)
P-type doping of organic wide band gap materials by transition metal oxides: a case study on molybdenum trioxide, Michael Kröger, Sami Hamwi, Jens Meyer, Thomas Riedl, Wolfgang Kowalsky, and Antoine Kahn, Org. Elect. 10, 932 (2009)
Influence of chemical doping on the performance of organic photovoltaic cells, C.K. Chan, W. Zhao, A. Kahn and I.G. Hill, Appl. Phys. Lett. 94, 203306 (2009)
Electronic and magnetic properties of Ni nanoparticles embedded in various organic matrices, Björn Bräuer, Yana Vaynzof, Wei Zhao, Antoine Kahn, Wen Li, Dietrich Zahn, César de Julián Fernández, Claudio Sangregorio, and Georgeta Salvan, J. Phys. Chem. B 113, 4565 (2009)
Electronic Band Structure and Ensemble Effect in Monolayers of Linear Molecules investigated by Photoelectron Spectroscopy, M. Häming, J. Ziroff, E. Salomon, O. Seitz, D. Cahen, A. Kahn, E. Umbach, A. Schöll and F. Reinert, Phys. Rev. B 79, 155418 (2009)
Electrical transport and photoemission experiments of alkylphosphonate monolayers on GaAs, Hagay Shpaisman, Guy Nesher, Ayelet Vilan, Hagai Cohen, David Cahen, Eric Salomon, and Antoine Kahn, J. Phys. Chem. C 113, 3313 (2009)
N-doping of pentacene by decamethylcobaltocene, Calvin K. Chan and Antoine Kahn, Appl. Phys. A 95, 7 (2009)
Hole injection in a model fluorene-triarylamine copolymer, Hon Hang Fong, Alexis Papadimitratos, Jaehyung Hwang, Antoine Kahn and George G. Malliaras, Adv. Funct. Mater. 19, 304 (2009)
Energetics of Metal-Organic Interfaces: New Experiments and Assessment of the Field, Jaehyung Hwang, Alan Wan and Antoine Kahn, Materials Science and Engineering, R 64, 1-31 (2009)

2008

Electronic Transport through Molecular Monolayers: Comparison between Hg / alkoxy & alkyl monolayer / Si (100) junctions, Florent Thieblemont, Oliver Seitz, Ayelet Vilan, Hagai Cohen, Eric Salomon, Antoine Kahn, and David Cahen, Adv. Mat. 20, 3931 (2008)
Photoemission spectroscopies studies of a tris(thieno)hexaazatriphenylene derivative/metal interfaces, Eric Salomon, Qing Zhang, Stephen Barlow, Seth R. Marder, and Antoine Kahn, Org. Elect. 9, 944 (2008)
Enhancement of electron injection into a light-emitting polymer from an aluminum oxide cathode modified by a self-assembled monolayer, Yana Vaynzof, Joseph T. Dennes, Jeffrey Schwartz and Antoine Kahn, Appl. Phys. Lett. 93, 103305 (2008)
Decamethylcobaltocene as an efficient n-dopant in organic electronic materials and devices, Calvin K. Chan, Wei Zhao, Stephen Barlow, Seth R. Marder, and Antoine Kahn, Org. Elect. 9, 575 (2008)
Quasiepitaxy of a tris(thieno)hexaazatriphenylene derivative adsorbed on Ag(110): structural and electronic properties probed by scanning tunneling microscopy, E. Salomon, Q. Zhang, S. Barlow, S. Marder and A. Kahn, J. Phys. Chem. C112, 9803 (2008)
Doping molecular monolayers: effects on electrical transport through alkyl chains on Si, Oliver Seitz, Ayelet Vilan, Hagay Cohen, Jaehyung Hwang, Chen Huang, Marc Haeming, Achim Schoell, Eberhard Umbach, Antoine Kahn, and David Cahen, Adv. Funct. Mat. 18, 2102 (2008)
One-dimensional organic nano-structures: novel approach based on silicon nanowires, Eric Salomon and A. Kahn, Surf. Sci. Lett. 602, L79 (2008)
Fluorenyl-substituted siloles: geometric, electronic, optical, and device properties, Xiaowei Zhan, Andreas Haldi, Chad Risko, Calvin Chan, Wei Zhao,Tatiana V. Timofeeva, Zesheng An, Benoit Domercq,Stephen Barlow, Antoine Kahn, Bernard Kippelen, Jean-Luc Brédas, and Seth R. Marder, J. Mater. Chem. 18, 3157 (2008)
Improving charge injection in organic thin-film transistors with thiol-based self-assembled monolayers, P. Marmont, N. Battaglini, Ph. Lang, G. Horowitz, J. Hwang and A. Kahn, Org. Elect. 9, 419 (2008)
Measurements of the Einstein Relation in doped and undoped Molecular Thin Films, O. Tal, I. Epstein, O. Baboor, Y. Roichman, Y. Ganot, N. Tessler, C.K Chan, A.Kahn, and Y. Rosenwaks, Phys. Rev. B, Rapid Comm. 77, 201201 (2008)
Substrate-dependent electronic structure of an organic heterojunction, Wei Zhao, Eric Salomon, Qing Zhang, Stephen Barlow and Seth R. Marder and Antoine Kahn, Phys. Rev. B 77, 165336 (2008)
Commensurate growth and diminishing substrate influence in a multilayer film of a tris(thieno)hexaazatriphenylene derivative on Au(111) studied by scanning tunneling microscopy, Sieu D. Ha, Qing Zhang, Stephen Barlow, Seth R. Marder, and Antoine Kahn, Phys. Rev. B 77, 085433 (2008)
Physics and Technology of Organic Semiconductor Devices, 2008 Fall MRS Symposium Proceedings Vol. 1115, M. Baldo, P.W.M. Blom, A. Kahn and P. Peumans edits.
The 7th International Conference on Nano-Molecular Electronics (ICNME 2006), Mitsumasa Iwamoto, Keiichi Kaneto, Shiyoshi Yokoyama and Antoine Kahn editors, Thin Solid Films, 516, 2347-2822 (2008)

2007

Electron spectra of a self-assembled monolayer on gold: inverse photoemission and two-photon photoemission spectroscopy, N. J. Watkins, C. D. Zangmeister, C. K. Chan, W. Zhao, D. Corley, J.M. Tour, A. Kahn and R. D. van Zee, Chem. Phys. Lett. 446, 359 (2007)
Organophosphonate Self-Assembled Monolayers for Gate Dielectric Surface Modification of Pentacene-Based Organic Thin-Film Transistors: A Comparative Study, Joseph E. McDermott, Matthew McDowell, Ian G. Hill, Jaehyung Hwang, Antoine Kahn, Stephen L. Bernasek, and Jeffrey Schwartz, J. Phys. Chem. C 111, 12333 (2007)
Effect of doping organic monolayers on electronic charge transport, O. Seitz, A. Vilan, H. Cohen, C. Chan, J. Hwang, A. Kahn and D. Cahen, J. Am. Chem. Soc. 129, 7494 (2007)
Incorporation of cobaltocene as an n-dopant in organic molecular films, C.K. Chan, S. Barlow, Q. Zhang, S.R. Marder, and A. Kahn, J. Appl. Phys. 102 014906 (2007)
Multi-phase growth and electronic structure of ultra-thin hexaazatrinaphthylene on Au(111), S. Ha, B. Kaafarani, S. Barlow, S.R. Marder and A. Kahn, J. Phys. Chem. C 111, 10493 (2007)
Synthesis, Ionization Potentials, and Electron Affinities of Hexaazatrinaphthylene Derivatives, S. Barlow,Q. Zhang, B. Kaafarani, C. Risko, F. Amy, B. Domercq, T. V. Timofeeva, B. Kippelen, J.-L. Brédas, A. Kahn, S.R. Marder, Chem. Eur. J. 13, 3537 (2007)
Evidence of environmental strains on charge injection in silole based organic light emitting diodes, N. Huby and L. Hirsch, L. Aubouy and P. Gerbier, A. Van Der Lee, F. Amy and A. Kahn, Phys. Rev. B 75, 115416 (2007)
Induced Density of States model for weakly-interacting organic interfaces, H. Vazquez, F. Flores and A. Kahn, Org. Elect. 8, 241 (2007)
What is the barrier for tunneling through alkyl monolayers? Results from n- and p-Si-C-alkyl/Hg junctions, A. Salomon, O. Seitz, T. Böcking, L. Segev, L. Kronik, F. Amy, C.K. Chan, A. Kahn and D. Cahen, Adv. Mat. 19, 445 (2007)
Photoelectron Spectroscopic Study of the Electronic Band Structure of Polyfluorene and Fluorene-Arylamine Copolymers at Interfaces, J. Hwang, E.-G. Kim, J. Liu, J.-L. Brédas, A. Duggal and A. Kahn, J. Phys. Chem. C 111, 1378 (2007)
Energy Level Alignment between 9-Phosphonoanthracene Self Assembled Monolayers and Pentacene, I. G. Hill, J. Hwang, C. Huang, A. Kahn, J. E. McDermott and J. Schwartz, Appl. Phys. Lett. 90, 012109 (2007)

2006

Interface energetics of polyfluorene and fluorene-arylamine copolymers, J. Hwang and A. Kahn, Proc. SPIE Vol. 6333, 633310, Organic Light Emitting Materials and Devices X; Zakya H. Kafafi, Franky So; Eds. (2006)
n-type doping of an electron transport material by controlled gas-phase incorporation of cobaltocene, C.K. Chan, F. Amy, Q. Zhang, S. Barlow, S. Marder and A. Kahn, Chem. Phys. Lett. 431, 67 (2006)
Radiation damage to alkyl chain monolayers on semiconductor substrates investigated by electron spectroscopy, F. Amy, C.K. Chan, W. Zhao, J. Hyung, M. Ono, T. Sueyoshi, S. Kera, G. Nesher, A. Salomon, L. Segev, O. Seitz, H. Shpaisman, A. Schöll, M. Haeming, T. Böcking, D. Cahen, L. Kronik, N. Ueno,E. Umbach and A. Kahn, J. Chem Phys. B 110, 21826 (2006)
Electronic structure of Si(111)-bound alkyl monolayers: theory and experiment, L. Segev, A. Salomon, A. Natan, D. Cahen, L. Kronik, F. Amy, C. Chan and A. Kahn, Phys. Rev. B 74, 165323 (2006)
Wet chemical cleaning of germanium surfaces for growth of high-k dielectrics, S. Rivillon-Amy, Y. J. Chabal, F. Amy, A. Kahn, C. Krugg, and P. Kirsch, Proceed. Spring 2006 MRS Symposium
Spectroscopic study on sputtered PEDOT·PSS: role of surface PSS layer, J. Hwang, F. Amy and A. Kahn, Org. Elect. 7, 387 (2006)
Energy level and band alignment for GaAs-alkylthiol monolayer-Hg junctions, from electrical transport and photoemission experiments, G. Nesher, A. Vilan, H. Cohen, D. Cahen, F. Amy, C. Chan, J. Hwang and A. Kahn, J. Phys. Chem. 110, 14363 (2006)
Doping-induced realignment of molecular levels at organic-organic heterojunctions, A. Kahn, W. Zhao, W. Gao, H. Vazquez and F. Flores, Chem. Phys. 325, 129-137 (2006)
Threshold voltage as a measure of molecular levels shift in organic thin film transistors, O. Tal and Y. Rosenwaks, C. K. Chan and A. Kahn, Y. Roichman, Y. Preezant and N. Tessler, Appl. Phys. Lett. 88, 043509 (2006)
Molecular n-type Doping of NTCDA by Pyronin B Studied by Direct and Inverse Photoemission Spectroscopy, C. Chan, E.-G. Kim, J.-L. Brédas and A. Kahn, Adv. Funct. Mat. 16, 831 (2006)

2005

How do electronic carriers cross alkyl monolayers?, A. Salomon, O. Girshevitz, D. Cahen, T. Boecking, M. Gal, C.K. Chan, F. Amy and A. Kahn, Phys. Rev. Lett. 95, 266807 (2005)
Direct determination of the hole density of states in doped and undoped amorphous organic films with high lateral resolution, O. Tal, Y. Rosenwaks, Y. Preeznan, N. Tessler, C. Chan and A. Kahn, Phys. Rev. Lett. 95, 256405 (2005)
High charge carrier mobility in an amorphous hexaazatrinaphthylene derivative, B.R. Kaafarani, T. Kondo, J. Yu, Q. Zhang, D. Dattilo, C. Risko, S.C. Jones, S. Barlow, B. Domercq, F. Amy,A. Kahn,J.-L. Brédas, B. Kippelen, and S.R. Marder J. Am. Chem. Soc. 127, 16358 (2005)
Hydrogen passivation of germanium (100) surface using wet chemical preparation, S. Rivillon, Y. Chabal, F. Amy and A. Kahn, Appl. Phys. Lett. 87, 253101 (2005)
Enhancement of iridium-based organic light-emitting diodes by spatial doping of the hole transport layer, Y. Wang, W. Gao, S. Braun, W.R. Salaneck, F. Amy, C. Chan and A. Kahn, Appl. Phys. Lett. 87, 193501 (2005)
Energetics of Interfaces between Molecules and Conductors, D. Cahen, A. Kahn and E. Umbach, Materials Today, July/August issue, 32-41 (2005)
Nanoscale Measurements of Electronic Properties in Organic Thin Film Transistors, O. Tal, Y. Rosenwaks, C. Chan, A. Kahn, Y. Roichman and N. Tessler, Proceed. 2005 Spring MRS Symposium
Electron affinities of 1,1-diaryl-2,3,4,5-tetraphenylsiloles: direct measurements and comparison with experimental and theoretical estimates, X. Zhan, C. Risko, F. Amy, C. Chan, W. Zhao, S. Barlow, A. Kahn, J.-L. Brédas, and S. R. Marder, J. Am. Chem. Soc. 127, 9021 (2005)
Polarization at the gold/pentacene interface, F. Amy, C. Chan and A. Kahn, Org. Elect., 6, 85 (2005)
Role of the Charge Neutrality Level at Metal/Organic and Organic/Organic Interfaces, H. Vazquez, F. Flores and A. Kahn, Proc. Int. Symp. Super-Functionality Organic Devices, IPAP Conf. Series 6, 1 (2005)
Molecular and solid state (8-hydroxy-quinoline)aluminum interaction with Magnesium: a first principles study, S. Meloni, A. Kahn, J. Schwartz, A. Palma and R. Car, J. Appl. Phys. 98, 023707 (2005) (also published in the August 1, 2005 issue of Virtual Journal of Nanoscale Science & Technology)
Impact of electrode contamination on a-NPD/Au hole injection barriers, A. Wan, J. Hwang, F. Amy and A. Kahn, Org. Elect. 6, 47 (2005)
Effect of Metal - Molecular Binding Group Interactions on Metal/Molecule/Semiconductor Junction Behavior, H. Haick, J. Ghabboun, O. Niitsoo, H. Cohen, D. Cahen, A. Vilan, J. Hwang, A. Wan, F. Amy, and A. Kahn, J. Phys. Chem. B 109, 9622 (2005)
Electrical doping of Poly(9,9-dioctylfluorenyl-2,7-diyl) with tetrafluoro-tetracyanoquinodimethane by solution method, J. Hwang and A. Kahn, J. Appl. Phys. 97, 103705 (2005)
Observation of filled states at the Fermi level in alkali-metal intercalated organic films: dependence on substrate work function, N. Koch, F. Jäckel, J. Ghijsen, M. C. Rojas, M. Grioni, J. P. Rabe, R. L. Johnson, A. Kahn, J.-J. Pireaux, J. Electr. Spect. Relat. Phenom. 144-147, 495 (2005)
Energy level alignment at organic heterojunctions: role of the charge neutrality level, H. Vazquez, W. Gao, F. Flores and A. Kahn, Phys. Rev B Rapid Comm. 71, 041306 (2005)

2004

Direct measurement of interface potential change and space charge region at metal/organic molecules/metal layered structures using Kelvin probe force microscopy, O. Tal, W. Gao, C.K. Chan, A. Kahn, and Y. Rosenwaks, Appl. Phys. Lett. 85, 4148 (2004)
Impact of an interface dipole layer on the energy alignment at an organic-conductor interface studied by UPS, S. Kera, Y. Yabuuchi, H. Yamane, H. Setoyama, K.K. Okudaira,A. Kahn and N. Ueno, Phys. Rev. B 70, 085304 (2004)
Dislocation arrangements in pentacene thin films, B. Nickel, R. Barabashy, R. Ruiz, N. Koch, A. Kahn, L.C. Feldman, R.F. Haglund, and G. Scoles Phys. Rev. B 70, 125401 (2004)
Characterization of GaAs grown by MBE on vicinal Ge(100) substrates, A. Wan, V. Menon, S.R. Forrest, D. Wasserman, S.A. Lyon and A. Kahn, J. Vac. Sci. Technol. B 22, 1893 (2004)
Study of excited stated of fluorinated copper phthalocyanine by inner shell excitation, K.K. Okudaira, H. Setoyama, H. Yagi, K. Mase, S. Kera, A. Kahn and N. Ueno, J. Electr. Spectr. Relat. Phenom. 137-140, 137 (2004)
Barrier formation at metal/organic interfaces: dipole formation and charge neutrality level, H. Vazquez, F. Flores, R. Oszwaldowski, J. Ortega, R. Perez and A. Kahn, Appl. Surf. Sci. 234, 107 (2004)
Measurement of band offset at the SrTiO₃ and BaTiO₃ / Si(100) heterojunction, F. Amy, A.S. Wan, A. Kahn, F.J. Walker, and R.A. McKee J. Appl. Phys. 96, 1635 (2004)
Surface and interface chemical composition of thin epitaxial SrTiO₃ and BaTiO₃ films: photoemission investigation, F. Amy, A.S. Wan, A. Kahn, F.J. Walker and R.A. McKee, J. Appl. Phys. 96, 1601 (2004)
Contact Potential Difference Measurements of Doped Organic Molecular Thin Films, C. Chan, W. Gao and A. Kahn, J. Vac. Sci. Technol. A 22, 1488 (2004)
Dipole formation at metal/PTCDA interfaces: role of the CNL, H. Vazquez, R. Oszwaldowski, P. Pou, J. Ortega, R. Perez, F. Flores and A. Kahn, EuroPhysics Lett. 65, 802 (2004)
Focused Issue on Organic Electronics,F. Faupel, C. Dimitrakopoulos, A. Kahn and C. Wöll, editors, J. Materials Research, 19, #7 (2004)

2003

Interplay Between Morphology, Structure and Electronic Properties at Diindenoperylene-Au-Interfaces, A.C. Dürr, N. Koch, M. Kelsch, A. Rühm, J. Ghijsen, R.L. Johnson, J.-J. Pireaux, J. Schwartz, F. Schreiber, H. Dosch, and A. Kahn, Phys. Rev. B 68, 115428 (2003)
Dynamic Scaling, Island Size Distribution and Morphology in the Aggregation Regime of Sub-monolayer Pentacene films, R. Ruiz, B. Nickel, N. Koch, L.C.Feldman, R.F.Haglund, A. Kahn, F. Family, and G. Scoles, Phys. Rev. Lett. 91, 136102-1 (2003)
Direct and inverse photoemission spectroscopy studies of potassium intercalated films of the organic semiconductors ZnPc and a-NPD, T. Schwieger, M. Knupfer, W. Gaoand A. Kahn, Appl. Phys. Lett. 83, 500 (2003)
Metal vs. Polymer Electrodes in Organic Devices: Energy Level Alignment, Hole Injection, and Structure, N. Koch, B.Nickel, J.Ghijsen, A.Elschner, J.Schwartz, J.-J.Pireaux and A.Kahn, Mat. Res. Soc. Symp. Proc., 771, L3.6.1 (2003)
Lack of thermodynamic equilibrium in conjugated organic molecular thin films, N. Koch, C. Chan, J. Schwartz and A. Kahn, Phys. Rev. B 67, 195330 (2003)
Chemistry between Magnesium and multiple molecules in tris-(8-hydroxyquinoline) aluminum films, S. Meloni, A. Palma, J. Schwartz, A. Kahn, and R. Car, J. Am. Chem. Soc. 125, 7808 (2003)
Optically Induced Electron Transfer From Conjugated Organic Molecules To Charged Metal Clusters, N. Koch, A. C. Dürr, J. Ghijsen, R. L. Johnson, J.-J. Pireaux, J. Schwartz, A. Kahn, Thin Solid Films 441, 145 (2003)
Controlled p doping of the hole-transport molecular material N,N’-diphenyl-N,N’-bis (1-naphthyl) -1,1’-biphenyl-4,4’-diamine with tetrafluorotetracyanoquinodimethane, W. Gao and A. Kahn, J. Appl. Phys. 94, 359 (2003)
Effect of electrical doping on molecular level alignment at organic-organic heterojunctions, W. Gao and A. Kahn, Appl. Phys. Lett. 82, 4815 (2003)
Controlling the Work Function of Indium Tin Oxide: Differentiating Dipolar from Local Surface Effects, J. Schwartz, E.L. Bruner, N. Koch, A.R. Span, S.L. Bernasek, and A. Kahn, Synthetic Metals, 138, 223 – 227 (2003)
Organic Molecular Films on Gold versus PEDOT/PSS: Influence of Injection Barrier Height and Morphology on Current-Voltage Characteristics, N. Koch, A. Elschner, J. Schwartz, A. Kahn, Appl. Phys. Lett. 82, 2281 (2003)
Pentacene thin film formation on hydrophilic and hydrophobic surfaces: a combined X-ray and AFM growth study, R. Ruiz, B.A. Nickel, N. Koch, G. Scoles, L.C. Feldman, R.F. Haglund and A. Kahn, Phys. Rev. B 67, 125406 (2003)
Electron energetics at surfaces & interfaces: concepts and experiments, D. Cahen and A. Kahn, Adv. Mat. 15, 271 (2003)
Conjugated Organic Molecules on Metal vs. Polymer Electrodes: Demonstration of a Key Energy Level Alignment Mechanism, N. Koch, J. Ghijsen, A. Elschner, R.L. Johnson, J.-J. Pireaux, J. Schwartz and A. Kahn, Appl. Phys. Lett. 82, 70 (2003)
Electrical doping: impact on interfaces of π-conjugated molecular films, W. Gao and A. Kahn, Journal of Physics: Condensed Matter 15, S2757-S2770 (2003)
Electronic Structure and Electrical Properties of Interfaces between Metals and π-Conjugated Molecular Films, A. Kahn, N. Koch and W. Gao, Journal of Polymer Science, Polymer Physics 41, 2529-2548 (2003)

2002

Growth and Morphology of Pentacene Films on Oxide Surfaces, R. Ruiz, L.C. Feldman, R.F. Haglund Jr., R.A. McKee, N. Koch, B.A. Nickel, J. Pflaum, G. Scoles, A. Kahn, Mat. Res. Soc. Symp. Proc., 708, (2002)
Interaction and energy level alignment at interfaces between pentacene and low work function metals, N. Koch, J. Ghijsen, R. Ruiz, J. Pflaum, R.L. Johnson, J.-J. Pireaux, J. Schwartz and A. Kahn, Mat. Res. Soc. Symp. Proc., 708, (2002)
Electronic polarization at surfaces and thin films of organic molecular crystals: PTCDA, E.V. Tsiper, Z. Soos, W. Gao and A. Kahn, Chem. Phys. Lett. 360, 47 (2002)
Electronic structure and current injection in zinc phthalocyanine doped with tetrafluorotetracyano-quinodimethane: interface versus bulk effects, W. Gao and A. Kahn, Org. Elect. 3, 53 (2002)
Reorganization Energy in Pentacene, N.E. Gruhn, D.A. Filho, T.G. Bill, M. Malagoli, A. Kahn, and J.L. Brédas, J. Am. Chem. Soc. 124, 7918 (2002)
Controlling the work function of indium tin oxide: differentiating dipolar from local surface effects, E. Bruner, N. Koch, A.R. Span, S.L. Bernasek, A. Kahn and J. Schwartz, J. Am. Chem. Soc. 124, 3192 (2002)
Physisorption-like interaction at interfaces formed between pentacene and samarium, N. Koch, J. Ghijsen, R.L. Johnson, J. Schwartz, J.-J. Pireaux and A. Kahn, J. Phys. Chem. B 106, 4192 (2002)
Structure and electronic properties of CH₃- and CF₃-terminated alkanethiols: a scanning tunneling microscopy and X-ray scattering study, J. Pflaum, G. Bracco, F. Schreiber, R. Colorado, R. Lee, G. Scoles and A. Kahn, Surf. Sci. 498, 89 (2002)

2001

Controlled p-type doping of an organic molecular semiconductor, W. Gao and A. Kahn, Appl. Phys. Lett., 79, 4040 (2001)
Electronic structure, diffusion and p-doping at the Au/F₁₆CuPc interface, C. Shen and A. Kahn, J. Appl. Phys. 90, 4549 (2001)
Role of metal-molecule chemistry and interdiffusion on the electrical properties of an organic interface: the Al-F₁₆CuPc case, C. Shen, A. Kahn and J. Schwartz, J. Appl. Phys., 90, 6236 (2001)
The role of interface states in controlling the electronic structure of Alq₃/reactive metal contacts, C. Shen and A. Kahn, Org. Elect., 2, 89 (2001)
Li doping of semiconducting organic charge transport materials, G. Parthasarathy, C. Shen, A. Kahn and S.R. Forrest, J. Appl. Phys. 89, 4986 (2001)
Comment on: "The growth and properties of Al and AlN films on GaN(0001)-(1x1)", V.M. Bermudez, C.-I. Wu and A. Kahn, J. Appl. Phys. 89, 1991 (2001)
Chemical and electrical properties of interfaces between magnesium and aluminum and tris-(8-hydroxy quinoline) aluminum, C. Shen, A. Kahn and J. Schwartz, J. Appl. Phys. 89, 449 (2001)
Aluminum, magnesium and gold contacts to contamination free n-GaN surfaces, C. Wu, A. Kahn, A.E. Wickenden, D. Koleske, and R.L. Henry, J. Appl. Phys. 89, 425 (2001)
Conjugated Polymer and Molecular Interfaces, W.R. Salaneck, K. Seki, A. Kahn and J.-J. Pireaux, editors, Marcel Dekker, Inc. (2001).
Proceedings of the Tenth International Conference on Solid Films and Surfaces, S. Bernasek, A. Kahn and G. Scoles editors, Applied Surface Science 175/176 (2001).
Organic Molecular Interfaces: Investigations of Electronic Structure, Chemistry and Carrier Injection Properties, C. Shen, A. Kahn and I.G. Hill, in Conjugated Polymer and Molecular Interfaces, W.R. Salaneck, K. Seki, A. Kahn and J.-J. Pireaux, editors, Marcel Dekker, Inc. (2001), p. 351-400

2000

Charge separation energy in films of p-conjugated organic molecules, I.G. Hill, A. Kahn, Z.G. Soos and R.A. Pascal, Jr., Chem. Phys. Lett. 327, 181 (2000)
Metal-dependent charge transfer and chemical interaction at interfaces between 3,4,9,10-perylenetetracarboxylic bisimidazole and gold, silver and magnesium, I.G. Hill, J. Schwartz and A. Kahn, Org. Elect., 1, 5 (2000)
Influence of steps on the orientation of a monolayer of copper phthalocyanine on Au(111), I. Chizhov, G. Scoles and A. Kahn, Langmuir, 16, 4358 (2000)
Organometallic chemistry at the magnesium-tris(8-hydroxyquinolino)aluminum interface, C. Shen, I.G. Hill, A. Kahn and J. Schwartz, J. Am. Chem. Soc. 122, 5391 (2000)
Occupied and unoccupied electronic levels in organic p-conjugated molecules: comparison between experiment and theory, I.G. Hill, A. Kahn, J. Cornill, D.A. dos Santos and J.L. Brédas, Chem. Phys. Lett. 317, 444 (2000)
Organic semiconductor interfaces: electronic structure and transport properties, I.G. Hill, D. Milliron, J. Schwarz and A. Kahn, Appl. Surf. Sci. 166, 354 (2000)
Negative electron affinity and electron emission at cesiated GaN and AlN surfaces, C.I. Wu and A. Kahn, Appl. Surf. Sci. 162/163, 250 (2000)
Surface oxidation activates indium tin oxide for hole injection, D.J. Markiewicz, I.G. Hill, A. Kahn and J. Schwartz, J. Appl. Phys. 87, 572 (2000)
Initial growth of 3,4,9,10-perylenetetracarboxylic-dianhydride (PTCDA) on Au(111): a scanning tunneling microscopy study, I. Chizhov, A. Kahn and G. Scoles, J. Cryst. Growth 208, 449 (2000)

1999

Modification of organic interfaces: from molecular level measurements to injection characteristics, I.G. Hill, D. Milliron, J. Schwartz and A. Kahn, in Organic Light-Emitting Materials and Devices III, , Zakya H. Kafafi Editor, Proceedings of SPIE, Vol. 3797, 276 (1999)
Role of electrode contamination in electron injection at Mg:Ag/Alq₃ interfaces, C. Shen, I.G. Hill and A. Kahn, Adv. Mat. 11, 1523 (1999)
Transparent stacked organic light emitting devices I.: Design and transparent compound electrodes, G. Gu, G. Parthasarathy, P.E. Burrows, P. Tian, I.G. Hill, A. Kahn and S.R. Forrest, J. Appl. Phys. 86, 4067 (1999)
Organic semiconductor heterointerfaces containing bathocuproine, I.G. Hill and A. Kahn, J. Appl. Phys. 86, 4515 (1999)
Electronic states and effective negative electron affinity at the cesiated p-GaN surface, C.I. Wu and A. Kahn, J. Appl. Phys. 86, 3209 (1999)
Combined photoemission / in-vacuo transport study of the ITO/CuPc/a-NPD molecular organic semiconductor system, I.G. Hill and A. Kahn, J. Appl. Phys. 86, 2116 (1999)
Band alignment at organic-inorganic semiconductor interfaces: a-NPD and CuPc on InP(110), T. Chassé, C-I Wu, I.G. Hill, and A. Kahn, J. Appl. Phys. 85, 6589 (1999)
Negative electron affinity at the Cs/AlN surface, C.I. Wu and A. Kahn, Appl. Phys. Lett. 74, 1433 (1999)
Electronic states at AlN(0001)-(1x1) surfaces, C.I. Wu and A. Kahn, Appl. Phys. Lett. 74, 546 (1999)

1998

Interface electronic properties of organic molecular semiconductor interfaces, I.G. Hill and A. Kahn, in Organic Light-Emitting Materials and Devices II, Zakya H. Kafafi Editor, Proceedings of SPIE, Vol. 3476, 168 (1998)
Energy level alignment at interfaces of organic semiconductor heterostructures, I. Hill and A. Kahn J. Appl. Phys. 84, 5583 (1998)
Electron affinity and secondary electron emission at AlN(0001), C.I. Wu, A. Kahn, E.S. Hellman and D.N.E. Buchanan, Appl. Phys. Lett. 73, 1346 (1998)
Electronic properties of metal-organic interfaces with application to electroluminescent devices, A. Rajagopal, I. Hill and A. Kahn, Molecular Crystals and Liquid Crystals A 322, 245(1998)
Energy level alignment at interfaces between metals and the organic semiconductor 4,4'-N,N'-dicarbazolyl-biphenyl, I. Hill, A. Rajagopal and A. Kahn J. Appl. Phys. 84, 3236 (1998)
Investigation of the chemistry and electronic properties of metal/GaN interfaces via photoemission spectroscopy, C.I. Wu and A. Kahn, J. Vac. Sci. Technol. B16, 2218 (1998)
Molecular level alignment at organic semiconductor - metal interfaces, I. Hill, A. Rajagopal, A. Kahn and Y. Hu, Appl. Phys. Lett. 73, 662 (1998)
GaN(0001) surfaces: composition and electronic properties, C.I. Wu, A. Kahn, N. Taskar, D. Dorman and D. Gallagher, J. Appl. Phys. 83, 4249 (1998)
Mg/Alq₃ interfaces: electronic structure and interdiffusion studied by photoemission spectroscopy, A. Rajagopal and A. Kahn, J. Appl. Phys. 84, 355 (1998)
Energy level offset at organic semiconductor heterojunctions, A. Rajagopal, C.I. Wu and A. Kahn, J. Appl. Phys. 83, 2649 (1998)
Molecular level offset at the PTCDA/Alq₃ heterojunction, A. Rajagopal and A. Kahn, Advanced Materials 10, 140 (1998)
Organic-inorganic interfaces: Principles of quasi-epitaxy of a molecular semiconductor on inorganic compound semiconductors, C. Kendrick and A. Kahn, Appl. Surf. Sci. 123/124, 405 (1998)
Structural and spectroscopic investigation of the In-terminated InAs(100) (4x2)/c(8x2) reconstruction, C. Kendrick, G. LeLay and A. Kahn, Surface Review and Letters 5, 229 (1998)
Growth of the organic molecular semiconductor PTCDA on Se-passivated GaAs(100): an STM study, C. Kendrick and A. Kahn, Surface Review and Letters 5, 289 (1998)

1997

Industry/University teaming for display research, J.L. Crowley, O. Awadelkarim, S.J. Fonash, T.N. Jackson, T.M. Peterson, J.C. Sturm, A. Kahn and S. Wagner, Cockpit Display IV: Flat Panel Displayfor Defense Applications, Proc. of SPIE 3057, 60 (1997)
Device technology for lightweight panoramic displays, S.J. Fonash, O. Awadelkarim, J.L. Crowley, T.N. Jackson, A. Kahn, J.C. Sturm and S. Wagner, Cockpit Display IV: Flat Panel Display for Defense Applications, Proc. of SPIE 3057, 570 (1997)
Electron-hole interaction energy in the organic molecular semiconductor PTCDA, C.I. Wu, Y. Hirose, H. Sirringhaus and A. Kahn, Chem. Phys. Lett. 272, 43 (1997)
STM investigation of the early stages of ZnSe epitaxy on GaAs(001), S. Ahsan, A. Kahn and M.D. Pashley, Appl. Phys. Lett. 71, 2178 (1997)
Self-passivated copper gates for amorphous silicon thin film transistors, H. Sirringhaus, A. Kahn and S. Wagner, SPIE 3014, 62 (1997)
Surface modification of indium tin oxide by plasma treatment: an effective method to improve the efficiency, brightness and reliability of organic light emitting devices, C.Wu, C.I. Wu, J.C. Sturm and A. Kahn, Appl. Phys. Lett. 70, 1348 (1997)
Self-passivated copper gates for thin film amorphous silicon transistors, H. Sirringhaus, A. Kahn, S.D. Theiss and S. Wagner, Proceedings of the Materials Research Society Symposium, W.L. Warren, R.A.B. Devine, M. Matsumura, S. Cristoloveanu, Y. Homma and J. Kanicki edits., 446, 59 (1997)
Self-passivated copper gates for thin film silicon transistors, H. Sirringhaus, S.D. Theiss, A. Kahn and S. Wagner, IEEE Electron Device Lett. 18, 388 (1997).
Epitaxial growth and phase transition in multilayers of the organic semiconductor PTCDA on InAs(100), C. Kendrick and A. Kahn, J. Cryst. Growth 181, 181 (1997)
Self-passivated copper gates for thin film silicon transistors, H. Sirringhaus, S.D. Theiss, A. Kahn and S. Wagner, Proceed. AMLCD Conference, Kobe, Japan November 1996.
Chemistry and electrical properties of metal contacts on an organic molecular semiconductor, Y. Hirose, C.I. Wu, A. Kahn, V. Aristov and P. Soukiassian, Appl. Surf. Sci. 113/114, 291 (1997)
Structural and electronic properties of the Zn_0.5Cd_0.5 Se(100) surface, D.Y. Yu, A. Kahn, A. Cavus and M.C. Tamargo, Surf. Sci. 373, 350 (1997)

1996

Bias-dependent imaging of the In-terminated InAs(100) (4x2)-c(8x2) surface by STM: reconstruction and transitional defect, C. Kendrick, A. Kahn and G. LeLay, Phys. Rev. B 54, 17877 (1996)
Chemistry and electronic properties of metal/organic semiconductor interfaces: Al, Ti, In, Sn, Ag and Au on PTCDA, Y. Hirose, A. Kahn, V. Aristov, P. Soukiassian, V. Bulovic and S.R. Forrest, Phys. Rev. B 54, 13748 (1996)
Atomic structure of (100) surfaces of zincblende compound semiconductors, A. Kahn, Surface Review and Letters 3, 1579 (1996)
Chemistry, diffusion and electronic properties of a metal / organic semiconductor contact: In / PTCDA, Y. Hirose, A. Kahn, V. Aristov, and P. Soukiassian, Appl. Phys. Lett. 68, 217 (1996)
STM study of the organic semiconductor PTCDA on HOPG, C. Kendrick, S.R. Forrest and A. Kahn, Appl. Surf. Sci. 104/105, 586 (1996)
Determination of the Atomic Geometries of the (110) surfaces of CuCl and CuBr by dynamical low energy electron diffraction intensity analysis, C.B. Duke, A. Paton, A. Lazarides and A. Kahn, Phys. Rev B 54, 14692 (1996)
Proceedings of Fifth International Conference on the Formation of Semiconductor Interfaces, A. Kahn and R. Ludeke editors, Applied Surface Science 104/105 (1996).

1995

Quasi-epitaxy of an organic molecular semiconductor on inorganic substrates, C. Kendrick, Y. Hirose, A. Kahn and G. LeLay, Phys. Low-Dim. Struct. 10/11, 1 (1995)
Determination of the surface atomic geometry of PbTe(100) by dynamical low energy electron diffraction intensity analysis, A. Lazarides, C.B. Duke, A. Paton and A. Kahn, Phys. Rev. B 52, 14895 (1995)
Quasiepitaxial growth of the organic molecular semiconductor 3,4,9,10-perylenetetracarboxylic dianhydride, Y. Hirose, S. Forrest and A. Kahn, Phys. Rev. B 52, 14040 (1995)
Chemistry of Al- and Au-ZnSe(100) interfaces, W. Chen, A. Kahn, P. Soukiassian, P. Mangat, J. Gaines, C. Ponzoni and D. Olego, Phys. Rev. B 51, 14265 (1995)
Surface relaxation of PbTe(100), C.B. Duke, A. Lazarides, A. Paton and A. Kahn, J. Vac. Sci. Technol. 13, 1378 (1995).
Ordered, quasi-epitaxial growth of an organic thin film on Se-passivated GaAs(100), Y. Hirose, S.R. Forrest and A. Kahn, Appl. Phys. Lett. 66, 944 (1995).

1994

Reduction of the Au/p-ZnSe(100) Schottky barrier using a thin Se interlayer, W. Chen, A. Kahn, J. Gaines, D. Olego, P.S. Mangat and P. Soukiassian, J. Cryst. Growth, 138, 1078 (1994).
ZnSe(100): the surface and the formation of Schottky barriers with Al and Au, W. Chen, A. Kahn, P. Soukiassian, P. Mangat, J. Gaines, C. Ponzoni, and D. Olego, J. Vac. Sci. Technol. B 12, 2639 (1994).
Structural and electronic properties of an organic/inorganic semiconductor interface: PTCDA/GaAs(100), Y. Hirose, W. Chen, E.I. Haskal, S.R. Forrest and A. Kahn, J. Vac. Sci. Technol. B 12, 2616 (1994).
Atomic configuration, composition and surface dipole at the ZnSe(100) surface, W. Chen, A. Kahn, P. Soukiassian, P.S. Mangat, J. Gaines, C. Ponzoni and D. Olego, Phys. Rev. B 49, 10790 (1994).
Organic-inorganic semiconductor interface: PTCDA/GaAs(100), Y. Hirose, W. Chen, E.I. Haskal, S.R. Forrest and A. Kahn, Appl. Phys. Lett. 64, 3482 (1994).
Chemistry of an heteroepitaxial ionic/covalent semiconductor interface: CuCl/GaP, W. Chen, P. Mangat. P. Soukiassian and A. Kahn, Proceed. 4th International Conference on the Formation of Semiconductor Interfaces, B. Lengeler, H. Lüth, W. Mönch and J. Pollmann edits. (World Scientific Publishing, 1994) p. 409.
Thirty years of atomic and electronic structure determination of surfaces of tetrahedrally-coordinated compound semiconductors, A. Kahn, Surface Science 299-300, 469-486 (1994).

1993

Pb/GaAs: band bending, adatom-induced gap states and surface dipole, W. Chen, A. Kahn, P.S. Mangat, P. Soukiassian, L.T. Florez, J.P. Harbison and C.J. Palmstrom, J. Vac. Sci. Technol. B 11, 1571 (1993).
Ionicity dependence of surface bond lengths on the (110) cleavage faces of isoelectronic zincblende structure compound semiconductors: GaP, ZnS and CuCl, D. Lessor, C.B. Duke, W. Ford and A. Kahn, J. Vac. Sci. Technol. A 11, 2205 (1993).
Atomic arrangement at the CuBr(100) surface and CuBr/GaAs(100) interface: application of the electron counting method, U. Dassanayake, W. Chen and A. Kahn, J. Vac. Sci. Technol. B 11, 1467 (1993).
Formation of Schottky barriers at unreactive interfaces: Ga/GaAs(100) and Pb/GaAs(100), W. Chen, D. Mao, A. Kahn, M. Santos, M. Shayegan, P. Mangat, P. Soukiassian, L.T. Florez and J. Harbison, J. Vac. Sci. Technol. A 11, 854 (1993).

1992

Molecular beam epitaxy growth of GaAs/Ca_0.5Sr_0.5F₂/GaAs multilayer structure, K. Young, S. Horng, A. Kahn and J.M. Phillips, J. Vac. Sci. Technol. B 10, 683 (1992).
Work function, electron affinity and band bending at decapped GaAs(100) surfaces, W. Chen, M. Dumas, D. Mao and A. Kahn, J. Vac. Sci. Technol. B 10, 1886 (1992).
Analysis of the atomic geometries of the () and () surfaces of CdSe by LEED and LEPD, T.N. Horsky, G.R. Brandes, K.F. Canter, C.B. Duke, A. Paton, D.L. Lessor, S.F. Horng, K. Stevens, K. Stiles, A. Kahn and A.P. Mills, Phys. Rev. B 46, 7011 (1992).
Morphology of the Ag/GaSb(110) Interface: a study by quantitative Auger electron spectroscopy, with A. Doukkali, J.J. Bonnet, L. Soonckindt, D. Mao and A. Kahn, J. Phys. III France 1, 37 (1992).
(511) and (711) GaAs epilayers prepared by molecular beam epitaxy, K. Young, A. Kahn and J.M. Phillips, J. Vac. Sci. Technol. B 10, 71 (1992).
Determinants of surface atomic geometry: the CuCl(110) test case, A. Kahn, S. Ahsan, W. Chen, M. Dumas, C.B. Duke and A. Paton, Phys. Rev. Lett. 68, 3200 (1992).
Epitaxial growth and characterization of CuCl(110)/GaP(110), W. Chen, M. Dumas, S. Ahsan, A. Kahn, C.B. Duke and A. Paton, J. Vac. Sci. Technol. A 10, 2071 (1992).
Electron beam patterning of epitaxial CaF₂ and Ca_0.5Sr_0.5F₂/ (100) GaAs, Y. Hirose, S. Horng, A. Kahn, C. Wrenn and R. Pfeffer, J. Vac. Sci. Technol. A 10, 960 (1992).
Sb-capping and decapping of MBE-grown GaSb(100), M. Dumas, M. Nouaoura, N. Bertru, L. Lassabatère, W. Chen and A. Kahn, Surf. Sci. Lett. 262, 91 (1992).
Formation of interfaces between In and Au and GaAs(100) studied with soft X-ray photoemission spectroscopy, D. Mao, M. Santos, M. Shayegan, A. Kahn, G. Le Lay, Y. Hwu, G. Margaritondo, L.T. Florez and J.P. Harbison, Phys. Rev. B 43, 1273 (1992).
Ca_0.5Sr_0.5F₂/ (100) GaAs for epitaxial regrowth and electron beam patterning, S. Horng, Y. Hirose, A. Kahn, C. Wrenn and R. Pfeffer, Appl. Surf. Sci. 56-58, 855 (1992)
Initial stages of Schottky barrier formation of Bi/Si(111) and Bi/Si(100) interfaces, K. Hricovini, G. Le Lay, A. Kahn, A. Taleb-Ibrahimi and J.E. Bonnet, Appl. Surf. Sci. 56-58, 259 (1992).
Kelvin probe and synchrotron radiation study of surface photovoltage and band bending at metal / (100) GaAs interfaces, D. Mao, A. Kahn, G. Le Lay, M. Marsi, Y. Hwu and G. Margaritondo, Appl. Surf. Sci. 56-58, 142 (1992).

1991

Growth of GaAs/Ca_0.5Sr_0.5F₂/(100)GaAs by molecular beam epitaxy, S. Horng, Y. Hirose, A. Kahn, C. Wrenn and R. Pfeffer, Mat. Res. Soc. Proc. 221, 175 (1991).
High resolution core level spectroscopy of decapped GaAs(100) surfaces, G. Le Lay, D. Mao, A. Kahn, Y. Hwu and G. Margaritondo, Phys. Rev. B43, 14301 (1991).
Surface photovoltage and band bending at metal/GaAs interfaces: a contact potential difference and photoemission spectroscopy study, D. Mao, A. Kahn, G. Le Lay, M. Marsi, Y. Hwu, G. Margaritondo, M. Santos, M. Shayegan, L.T. Florez and J.P. Harbison, J. Vac. Sci. Technol. B9 2083 (1991).
Morphology, chemistry and band bending at Ag- and In- (001) GaSb interfaces, Y. Chang, D. Mao, A. Kahn, J.J. Bonnet, L. Soonckindt and G. Le Lay, J. Vac. Sci. Technol. B9, 2349 (1991).
Growth of GaAs / Ca_0.45Sr_0.55F₂/GaAs structures by molecular beam epitaxy, S. Horng, A. Kahn, C. Wrenn and R. Pfeffer, Materials Science and Engineering, B9, 263 (1991).
Structural effects on Schottky barrier heights of Pb/Si and Bi/Si interfaces, K. Hricovini, G. Le Lay, A. Kahn, A. Taleb-Ibrahimi, J.E. Bonnet, L. Lassabatere and M. Dumas, Surf. Sci. 251/252, 424 (1991).
Ca_0.55Sr_0.45F₂ / (100) GaAs by molecular beam epitaxy, S. Horng, A. Kahn, C. Wrenn and R. Pfeffer, Proceed. 2nd Int'l Conference on Electronics Materials, 1990 Materials Research Society, p. 229.
Synchrotron radiation induced surface photovoltage at metal/GaAs interfaces, D. Mao, A. Kahn, M. Marsi and G. Margaritondo, Appl. Surf. Sci. 48/49, 324 (1991).
Atomic geometry of the CdS() surface, A. Kahn and C.B. Duke, in The Structure of Surfaces III, S.Y. Tong, M.A. van Hove, K. Takayanagi and X.D. Xie edits. (Springer-Verlag, 1991) p. 566.
Atomic structure of the CdS() surface: a dynamical analysis of low energy electron diffraction intensities, A. Kahn, C.B. Duke and Y.R. Wang, Phys. Rev. B44, 5606 (1991).
Coverage dependent surface photovoltage induced by synchrotron radiation at metal/GaAs interfaces, D. Mao, A. Kahn, M. Marsi and G. Margaritondo, J. Vac. Sci. Technol. A9, 898 (1991).
Abrupt metal-semiconductor interfaces, G. Le Lay, M. Abraham, A. Kahn, K. Hricovini and J.E. Bonnet, Physica Scripta T35, 261 (1991).
Lead adsorption on Ge(001) and Si(001) studied by core-level spectroscopy, K. Hricovini, G. Le Lay, A. Kahn, A. Taleb-Ibrahimi and J.E. Bonnet, in The Structure of Surfaces III, S.Y. Tong, M.A. van Hove, K. Takayanagi and X.D. Xie edits. (Springer-Verlag, 1991) p. 589.

1990

Synchrotron radiation induced surface photovoltage on GaAs studied by contact potential difference measurements, D. Mao, A. Kahn, M. Marsi and G. Margaritondo, Phys. Rev B 42, 3228 (1990).
Role of adatom adsorption geometry and overlayer morphology in the formation of metal-semiconductor interfaces, K. Stevens, L. Soonckindt and A. Kahn, J. Vac. Sci. Technol. A 8, 2068 (1990).
Overlayer metallicity and the formation of the In/GaSb(110) Schottky barrier at room and low temperature, Z.M. Lü, D. Mao, L. Soonckindt and A. Kahn, J. Vac. Sci. Technol. A 8, 1988 (1990).
Synchrotron radiation photoemission study of the formation of the Ag/GaSb(110) interface, D. Mao, L. Soonckindt, A. Kahn, A. Terrasi, Y. Whu and G. Margaritondo, J. Vac. Sci. Technol. A 8, 1983 (1990).

1989

Epitaxial growth of Ca_xSr_1-xF₂ on GaAs (100), (111), (511) and (711) surfaces, K. Young, S.F. Horng, A. Kahn and J.M. Phillips, Mat. Res. Soc. Symp. Proc. 148, 185 (1989).
Chemical and electronic properties of the Ag/GaSb(110) interface formed at room and low temperature, D. Mao, L. Soonckindt and A. Kahn, Phys. Rev. B 40, 5579 (1989).
Epitaxial growth of Bi on GaAs(100) surface, S. Horng and A. Kahn, J. Vac. Sci. Technol. B 7, 931 (1989).
Reply on a Comment by Spicer et al., K. Stiles and A. Kahn, Phys. Rev. Lett. 62, 606 (1989).
Photoemission study of the formation of interfaces between CaF₂ or SrF₂ and GaAs(110), D. Mao, K. Young, A. Kahn, R. Zanoni, J. McKinley and G. Margaritondo, Phys. Rev. B 39, 12735 (1989).
Elastic electron fine structure: first principle calculation, B.Y. Lin and A. Kahn, Surf. Sci. 216, 160 (1989).
Differences between LEPD and LEED structural determination of the cleavage faces of CdSe, with T.N. Horsky, G.R. Brandes, K.F. Canter, C.B. Duke, S.F. Horng, A. Kahn, D.L. Lessor, A.P. Mills, A. Paton, K. Stevens and K. Stiles, Phys. Rev. Lett. 62, 1876 (1989).
Elastic electron fine structure investigation of the interaction of oxygen with the Si(111) surface, B.Y. Lin and A. Kahn, J. Vac. Sci. Technol. A7, 1841 (1989).
Formation of the Ca/GaAs(110) interface, D. Mao, K. Young, K. Stiles and A. Kahn, J. Vac. Sci. Technol. A7, 744 (1989).
Structural Studies of (331) GaAs surfaces, S.F. Horng, K. Young and A. Kahn, J. Vac. Sci. Technol. A7, 2039 (1989).
Metal-GaAs(110) interfaces formed at low temperature: from adsorbate- to metal-induced gap states, K. Stiles, D. Mao, S.F. Horng, K. Young, A. Kahn, D.G. Kilday, J. McKinley and G. Margaritondo, in Metallization and Metal-Semiconductor Interfaces, NATO Advanced Study Institute, Series B Physics, Vol. 195, I.P. Batra editor (Plenum, New York 1989), p. 163.
Photoemission from surface states on the () and () surfaces of CdSe, Y.R. Wang, C.B. Duke, K. Stevens, A. Kahn, K.O. Magnusson and S.A. Flodström, Surf. Sci. Lett. 206, L817 (1988).
Formation of Schottky barriers on GaAs(110): from adsorbate-induced gap states to interface metallicity, K. Stiles, D. Mao, S.F. Horng, K. Young, A. Kahn, D.G. Kilday, J. McKinley and G. Margaritondo, J. Electronic Materials, 18, 33 (1989).

1988

Oxygen adsorbed on GaAs(110): the effect of temperature on band bending, K. Stiles, D. Mao and A. Kahn, J. Vac. Sci. Technol. B6, 1170 (1988).
Temperature-dependent Schottky barrier formation: the Ga/GaAs and Mn/GaAs interfaces, K. Stiles, S.F. Horng, A. Kahn, J. McKinley, D.G. Kilday and G. Margaritondo, J. Vac. Sci. Technol. B6, 1392 (1988).
Role of overlayer metallicity in the Fermi level pinning at the Ca-GaAs(110) interface, D. Mao, K. Young, K. Stiles and A. Kahn, J. Appl. Phys. 64, 4777 (1988).
Elastic electron fine structure: application to the study of local order, B.Y. Lin and A. Kahn, J. Vac. Sci. Technol. A6, 2085 (1988).
E_F pinning at the Sn/GaAs interface, K. Stiles, A. Kahn, D. Kilday, J. McKinley and G. Margaritondo, J. Vac. Sci. Technol. A6, 1462 (1988).
MIGS at the Ag and Au/GaAs interfaces, K. Stiles, A. Kahn, D. Kilday and G. Margaritondo, J. Vac. Sci. Technol. A6, 1511 (1988).
Dynamical analysis of low energy electron diffraction intensities from CdSe(), C.B. Duke, A. Paton, Y.R. Wang, K. Stiles and A. Kahn, Surf. Sci. 197, 11 (1988).

1987

Relaxation and surface states on wurzite cleavage faces: CdSe(), with Y.R. Wang, C.B. Duke, A. Paton, K. Stiles and A. Kahn, Phys. Rev. B36, 9406 (1987).
Correlation between overlayer metallic character and E_F pinning at the Ag/GaAs(110) interface, K. Stiles and A. Kahn, Phys. Rev. Lett. 60, 440 (1988).
Initial stages of Schottky barrier formation: temperature effects, K. Stiles, A. Kahn, D.G. Kilday and G. Margaritondo, J. Vac. Sci. Technol. B5, 987 (1987).
Summary abstract: LEED, AES and EELS studies of (511) and (711) GaAs surfaces, K. Young and A. Kahn, J. Vac. Sci. Technol. A5, 654 (1987).
Summary abstract: Kinetics of Schottky barrier formation: Au on low-temperature GaAs(110), K. Stiles, A. Kahn, D.G. Kilday and G. Margaritondo, J. Vac. Sci. Technol. A5, 1527 (1987).
Atomic and electronic structure of the (311) surfaces of GaAs, C.B. Duke, C. Mailhiot, K. Stiles and A. Kahn, Proceed. 18th ICPS, O. Engstrom edit., (World Scientific 1987) p.121.
Kinetics of E_F pinning at Au-GaAs(110) interfaces, K. Stiles, A. Kahn, D.G. Kilday, N. Tache and G. Margaritondo, Proceed. 18th ICPS, O. Engstrom edit., (World Scientific 1987) p.359.

1986

Summary abstract: Atomic geometry and electronic structure of the (311)-(1x1) surfaces of GaAs, C. Mailhiot, C.B. Duke, A. Paton, K. Stiles and A. Kahn, J. Vac. Sci. Technol. B4, 1083 (1986).
Structural studies of (511) and (711) GaAs surfaces, K. Young and A. Kahn, J. Vac. Sci. Technol. B4, 1091 (1986).
EELS and work function measurements of Sb/GaAs(110): Example of an unpinned interface?, K. Li and A. Kahn, J. Vac. Sci. Technol. A4, 958 (1986).
Atomic and electronic structure of the (311) surfaces of GaAs, C.B. Duke, C. Mailhiot, A. Paton, K. Stiles and A. Kahn, J. Vac. Sci. Technol. A4, 947 (1986).
Summary abstract: Aluminum deposition on low-temperature GaAs, M.K. Kelly, N. Tache, E. Colavita, G. Margaritondo and A. Kahn, J. Vac. Sci. Technol. A4, 882 (1986).
The kinetics of Schottky barrier formation: Al on low-temperature GaAs(110), M.K. Kelly, A. Kahn, N. Tache, E. Colavita and G. Margaritondo, Solid State Communication 58, 429 (1986).
First investigation of atomic geometries of (112) and () CuInSe₂ surfaces, A. Kahn, P. Corvini, S. Wagner and K.L. Bachmann, Solar Cell 16, 123 (1986).
Atomic geometries of zincblende compound semiconductor surfaces: similarities in surface rehybridizations, A. Kahn, Surf. Sci. 168, 1 (1986).

1985

Analysis of low-energy electron diffraction and angle-resolved photoemission from InP(110)-p(1x1)-Sb(1ML), C.B. Duke, C. Mailhiot, A. Paton, K. Li, C. Bonapace and A. Kahn, Surf. Sci. 163, 391 (1985).
Summary abstract: Atomic geometries of the (110) surfaces of III-V compound semiconductors: determination by total energy minimization and elastic low-energy electron diffraction, C.B. Duke, C. Mailhiot, A. Paton, D.J. Chadi and A. Kahn, J. Vac. Sci. Technol. B3, 1087 (1985).
Structure des interfaces metal-semiconducteur, A. Kahn, Vide- Couches Minces, 40, 226 (1985).
LEED study of (221) and (311) GaAs surfaces, K. Stiles and A. Kahn, J. Vac. Sci. Technol. B3, 1089 (1985).
EELS from GaAs(110) interfaces, C.R. Bonapace, D.W. Tu, J. Li and A. Kahn, J. Vac. Sci. Technol. B3, 1099 (1985).
ZnSe- and Se- GaAs interfaces, D.W. Tu and A. Kahn, J. Vac. Sci. Technol. A3, 922 (1985).
Sputter cleaning and annealing of single-crystal surfaces of CuInSe₂, P. Corvini, A. Kahn and S. Wagner, J. Appl. Phys. 57, 2967 (1985).
Growth and characterization of Sb overlayers on InP(110), J. Li, C.R. Bonapace and A. Kahn, Proceed. 17th ICPS, J.D. Chadi and W.A. Harrison edits. (Springer Verlag, Berlin (1985) p.129.

1984

Atomic and electronic structure of p(1x1) overlayers of Sb on the (110) surfaces of III-V semiconductors, C.B. Duke, C. Mailhiot, A. Paton, K. Li, C.R. Bonapace and A. Kahn, Proceed. ICSS (1984).
The ZnSe(110) puzzle: comparison with GaAs (110), C.B. Duke, A. Paton, D.W. Tu and A. Kahn, J. Vac. Sci. Technol. B2, 366 (1984).
The GaAs(110)-Al interface formed at low temperature, C.R. Bonapace, K. Li and A. Kahn, J. Physique Colloq. 45, C5 409-418 (1984).
LEED and AES characterization of the GaAs(110)-ZnSe interface, D. Tu and A. Kahn, J. Vac. Sci. Technol. A2, 511 (1984).
Summary abstract: GaAs(110)-Al interfaces formed at low temperature, C.R. Bonapace, K. Li and A. Kahn, J. Vac. Sci. Technol. A2, 566 (1984).
The atomic geometries of GaP(110) and ZnS(110) revisited: a structural ambiguity and its resolution, C.B. Duke, A. Paton and A. Kahn, J. Vac. Sci. Technol. A2, 515 (1984).
Surface Structure of GaAs(211), P. Hren, D.W. Tu and A. Kahn, Surf. Sci. 146, 69 (1984).

1983

Dynamical analysis of LEED intensities from Al/GaP(110): the high coverage limit, C.B. Duke, A. Paton, C.R. Bonapace and A. Kahn, Phys. Rev. B28, 852 (1983).
Structure of the Al-GaP(110) and Al-InP(110) interfaces, A. Kahn, C.R. Bonapace, C.B. Duke and A. Paton, J. Vac. Sci. Technol. B1, 613 (1983).
LEED analysis of the (110) surfaces of substitutionally disordered Ga_xAl_1-xAs, S.L. Richardson, C.B. Duke, A. Paton and A. Kahn, Bull. Am. Phys. Soc. 28, 458 (1983).
The atomic geometry of GaAs(110) revisited, C.B. Duke, S.L. Richardson, A. Paton and A. Kahn, Surf. Sci. Lett. 127, L135 (1983).
Dynamical analysis of LEED intensities from InAs(110), C.B. Duke, A. Paton, C.R. Bonapace and A. Kahn, Phys. Rev. B27 , 6189 (1983).
An AES-LEED study of the Al-GaP(110) interface, C. Bonapace and A. Kahn, J. Vac. Sci. Technol. A1, 588 (1983).
Atomic geometries of compound semiconductor surfaces and interfaces, A. Kahn, J. Vac. Sci. Technol. A1, 684 (1983).
Comparison of the atomic geometries of GaSb(110) and ZnTe(110): failure of ionicity - structure correlations, C.B. Duke, A. Paton and A. Kahn, J. Vac. Sci. Technol. A1, 672 (1983).
The atomic geometry of GaSb(110): determination via ELEED intensity analysis, C.B. Duke, A. Paton and A. Kahn, Phys. Rev. B27, 3436 (1983).
The atomic structure of semiconductor surfaces, A. Kahn, Surface Science Report 3, 193-300 (1983).

1982

Comparative LEED studies of Al_xGa_1-xAs(110) and GaAs(110)-Al(q), A. Kahn, J. Carelli, D.L. Miller and S.P. Kowalczyk, J. Vac. Sci. Technol. 20, 380 (1982).
Dynamical analysis of Low Energy Electron Diffraction intensities from GaAs(110)-Sb(1 ML), C.B. Duke, A. Paton, W.K. Ford, A. Kahn and J. Carelli, Phys. Rev. B 26, 803 (1982).
Elastic Low-Energy Electron Diffraction intensities from CdTe(110), C.B. Duke, A. Paton, W.K. Ford, G. Scott and A. Kahn, J. Vac. Sci. Technol. 20, 778 (1982).
Elastic Low-Energy Electron Diffraction from GaAs(110)-p(1x1)-Sb(1 ML), A. Kahn, J. Carelli, C.B. Duke, A. Paton and W.K. Ford, J. Vac. Sci. Technol. 20, 775 (1982).
LEED-AES-SXPS characterization of Sb overlayers on GaAs(110), J. Carelli and A. Kahn, Surf. Sci. 116, 380 (1982).

1981

Analysis of LEED intensities from ZnS(110), C.B. Duke, R.J. Meyer, A. Paton, A. Kahn, J. Carelli and J.L. Yeh, J. Vac. Sci. Technol. 18, 866 (1981).
Dynamical analysis of LEED intensities from CdTe(110), C.B. Duke, A. Paton, W.K. Ford, A. Kahn and G. Scott, Phys. Rev. B 24, 3310 (1981).
Dynamical analysis of LEED intensities from GaP(110), C.B. Duke, A. Paton, W.K. Ford, A. Kahn and J. Carelli, Phys. Rev. B 24, 562 (1981).
The atomic geometry of Al-GaAs interfaces: GaAs(110)-p(1x1)-Al(q), 0 £ q £ 8.5 monolayer, A. Kahn, J. Carelli, D. Kanani, C.B. Duke, A. Paton and L. Brillson, J. Vac. Sci. Technol. 19, 331(1981).
Atomic geometry of GaAs(110)-p(1x1)-Al(1/2ML), C.B. Duke, A. Paton, R.J. Meyer, L.J. Brillson, A. Kahn, D. Kanani, J. Carelli, J.L. Yeh, G. Margaritondo and A.D. Katnani, Phys. Rev. Lett. 46, 440 (1981).
Soft x-ray photoemission study of annealed Al-overlayers on GaAs(110), A. Kahn, L.J. Brillson, G. Margaritondo and A.D. Katnani, Solid State Communication 38, 1269 (1981).
LEED intensity analysis of the structure of Al on GaAs(110), A. Kahn, D. Kanani, J. Carelli, J.L. Yeh, C.B. Duke, R.J. Meyer, A. Paton and L. Brillson, J. Vac. Sci. Technol. 18, 792 (1981).

1980

Dynamical analysis of low energy electron diffraction intensities from InP(110), R.J. Meyer, C.B. Duke, A. Paton, J.C. Tsang, J.L. Yeh, A. Kahn and P. Mark Phys. Rev. B 22, 6171 (1980).
LEED analysis of the interaction of Al with the GaAs(110) surface, D. Kanani, A. Kahn and P. Mark, Proceed. of the 4th International Conference on Solid Surfaces, Cannes, September 1980, Vol. 1, p. 711-714.
Comparison of LEED and Auger data from cleaved and sputtered-annealed InP(110) surfaces, J.C. Tsang, A. Kahn and P. Mark, Surf. Sci. 97, 119 (1980).
The GaAs(110)-oxygen interaction: a LEED analysis II, A. Kahn, D. Kanani and P. Mark, Surf. Sci. 94, 547 (1980).
Surface structure of ZnTe(110) as determined from dynamical analysis of low energy electron diffraction intensities, R.J. Meyer, C.B. Duke, A. Paton, E. So, J.L. Yeh, A. Kahn and P. Mark, Phys. Rev. B 22, 2875 (1980).
Surface atomic geometry of covalently bonded semiconductors: InSb(110) and its comparison with GaAs(110) and ZnTe(110), C.B. Duke, R.J. Meyer, A. Paton, J.L. Yeh, J.C. Tsang, A. Kahn and P. Mark, J. Vac. Sci. Technol. 17, 501 (1980).
Dynamical analysis of low-energy electron diffraction intensities from InSb(110), R.J. Meyer, C.B. Duke, A. Paton, J.L. Yeh, J.C. Tsang, A. Kahn and P. Mark, Phys. Rev. B 21, 4740 (1980).

1979

Structure determination for the (110) surface of zincblende structure compound semiconductor, C.B. Duke, R.J. Meyer, A. Paton, P. Mark, A. Kahn, E. So and J.L. Yeh, J. Vac. Sci. Technol. 16, 1252 (1979).
The order-disorder effect of the GaAs(110)-oxygen interaction: a LEED-UPS analysis, A. Kahn, D. Kanani, P. Mark, P. Chye, C. Su, I. Lindau and W.E. Spicer, Surf. Sci. 87, 325 (1979).
Dynamical calculations of low energy electron diffraction intensities from GaAs(110): Influence of boundary conditions, exchange potentials, lattice vibrations, and multilayer reconstructions, R.J. Meyer, C.B. Duke, A. Paton, A. Kahn, E. So and P. Mark, Phys. Rev. B 19, 5194 (1979).
Structure, chemistry, and spectroscopy of the surfaces of tetrahedrally coordinated semiconductors, P. Mark, A. Kahn, G. Cisneros and M. Bonn, Critical Review of Solid State and Material Sciences, Volume 8, Issue 4, 317-381 (1979).

1978

Atomic structure of the Ge(111) annealed surface, M. Traubenblatt, E. So, P. Sih, A. Kahn and P. Mark, J. Vac. Sci. Technol. 15, 1143 (1978).
Surface and near surface atomic structure of GaAs(110), A. Kahn, E. So, P. Mark, C.B. Duke, and R.J. Meyer, J. Vac. Sci. Technol. 15, 1223 (1978).
Subsurface atomic displacements at the GaAs(110) surface, A. Kahn, E. So, P. Mark and C.B. Duke, J. Vac. Sci. Technol. 15, 580 (1978).
Evidence for subsurface atomic displacement of GaAs from LEED/CMTA analysis, A. Kahn, G. Cisneros, M. Bonn, P. Mark and C.B. Duke, Surf. Sci. 71, 387 (1978).

1977

Approach to structure determination of compound semiconductor surfaces by kinematical LEED calculation: GaAs(110) and ZnSe(110), P. Mark, G. Cisneros, M. Bonn, A. Kahn, C.B. Duke, A. Paton and A.R. Lubinsky, J. Vac. Sci. Technol. 14, 910 (1977).